component
IMW120R060M1H
Public Made by Adomby adom
Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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imw120r060m1h: specified limits as data (metadata.characteristics, 56 rows from the datasheet)
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+742
README.md+63@@ -21,6 +21,69 @@ IMW120R060M1H from Infineon Technologies, in a TO-247-3. Pinout and pin descript | Category | Silicon Carbide (SiC) Devices | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDSS | | | 1200 | V | Tvj ≥ 25°C | 3 |+| DC drain current | ID | | | 36 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 25°C | 3 |+| DC drain current | ID | | | 26 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 100°C | 3 |+| Pulsed drain current | ID,pulse | | | 76 | A | tp limited by Tvjmax, VGS = 18V | 3 |+| DC body diode forward current | ISD | | | 36 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 25°C | 3 |+| DC body diode forward current | ISD | | | 22 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 100°C | 3 |+| Pulsed body diode current | ISD,pulse | | | 76 | A | tp limited by Tvjmax | 3 |+| Gate-source voltage (max transient) | VGS | -7 | | 23 | V | Max transient voltage, < 1% duty cycle | 3 |+| Recommended turn-on gate voltage | VGS,on | 15 | | 18 | V | | 3 |+| Recommended turn-off gate voltage | VGS,off | | 0 | | V | | 3 |+| Short-circuit withstand time | tSC | | | 3 | µs | VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C | 3 |+| Power dissipation | Ptot | | | 150 | W | limited by Tvjmax, TC = 25°C | 3 |+| Power dissipation | Ptot | | | 75 | W | limited by Tvjmax, TC = 100°C | 3 |+| Virtual junction temperature | Tvj | -55 | | 175 | °C | | 3 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |+| Soldering temperature | Tsold | | | 260 | °C | wave soldering only at leads, 1.6mm (0.063 in.) from case for 10 s | 3 |+| Mounting torque, M3 screw | M | | | 0.6 | Nm | maximum of mounting processes: 3 | 3 |+| MOSFET/body diode thermal resistance, junction–case | Rth(j-c) | | 0.8 | 1 | K/W | | 4 |+| Thermal resistance, junction–ambient, leaded | Rth(j-a) | | | 62 | K/W | | 4 |+| Drain-source on-state resistance | RDS(on) | | 60 | 83 | mΩ | VGS = 18V, ID = 13A, Tvj = 25°C | 5 |+| Drain-source on-state resistance | RDS(on) | | 76 | | mΩ | VGS = 18V, ID = 13A, Tvj = 100°C | 5 |+| Drain-source on-state resistance | RDS(on) | | 113 | | mΩ | VGS = 18V, ID = 13A, Tvj = 175°C | 5 |+| Drain-source on-state resistance | RDS(on) | | 80 | 106 | mΩ | VGS = 15V, ID = 13A, Tvj = 25°C | 5 |+| Body diode forward voltage | VSD | | 4.1 | 5.2 | V | VGS = 0V, ISD = 13A, Tvj = 25°C | 5 |+| Body diode forward voltage | VSD | | 4 | | V | VGS = 0V, ISD = 13A, Tvj = 100°C | 5 |+| Body diode forward voltage | VSD | | 3.9 | | V | VGS = 0V, ISD = 13A, Tvj = 175°C | 5 |+| Gate-source threshold voltage | VGS(th) | 3.5 | | 4.5 | V | tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 25°C | 5 |+| Gate-source threshold voltage | VGS(th) | 3.6 | | 5.7 | V | tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 175°C | 5 |+| Zero gate voltage drain current | IDSS | | 0.6 | 180 | µA | VGS = 0V, VDS = 1200V, Tvj = 25°C | 5 |+| Zero gate voltage drain current | IDSS | | 1.9 | | µA | VGS = 0V, VDS = 1200V, Tvj = 175°C | 5 |+| Gate-source leakage current | IGSS | | | 100 | nA | VGS = 23V, VDS = 0V | 5 |+| Gate-source leakage current | IGSS | -100 | | | nA | VGS = -7V, VDS = 0V | 5 |+| Transconductance | gfs | | 7 | | S | VDS = 20V, ID = 13A | 5 |+| Internal gate resistance | RG,int | | 6 | | Ω | f = 1MHz, VAC = 25mV | 5 |+| Input capacitance | Ciss | | 1060 | | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 |+| Output capacitance | Coss | | 58 | | pF | | 6 |+| Reverse capacitance | Crss | | 6.5 | | pF | | 6 |+| Coss stored energy | Eoss | | 22 | | µJ | | 6 |+| Total gate charge | QG | | 31 | | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 |+| Gate to source charge | QGS,pl | | 9 | | nC | | 6 |+| Gate to drain charge | QGD | | 7 | | nC | | 6 |+| Turn-on delay time | td(on) | | 5.7 | | ns | Tvj = 25°C; VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V | 7 |+| Rise time | tr | | 7 | | ns | Tvj = 25°C | 7 |+| Turn-off delay time | td(off) | | 13 | | ns | Tvj = 25°C | 7 |+| Fall time | tf | | 12 | | ns | Tvj = 25°C | 7 |+| Turn-on energy | Eon | | 181 | | µJ | Tvj = 25°C | 7 |+| Turn-off energy | Eoff | | 31 | | µJ | Tvj = 25°C | 7 |+| Total switching energy | Etot | | 212 | | µJ | Tvj = 25°C | 7 |+| Diode reverse recovery charge | Qrr | | 180 | | nC | Tvj = 25°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs | 7 |+| Diode peak reverse recovery current | Irrm | | 5 | | A | Tvj = 25°C | 7 |+| Rise time | tr | | 17 | | ns | Tvj = 175°C | 7 |+| Turn-on energy | Eon | | 241 | | µJ | Tvj = 175°C | 7 |+| Turn-off energy | Eoff | | 33 | | µJ | Tvj = 175°C | 7 |+| Total switching energy | Etot | | 274 | | µJ | Tvj = 175°C | 7 |+| Diode reverse recovery charge | Qrr | | 225 | | nC | Tvj = 175°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs | 7 |+| Diode peak reverse recovery current | Irrm | | 7 | | A | Tvj = 175°C | 7 |+ ## CAD (KiCad official) - Symbol: `IMW120R060M1H`
page.json+679@@ -133,6 +133,685 @@ "Package": "TO-247-3", "Category": "Silicon Carbide (SiC) Devices", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ddb1352a32555ca0",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1200,+ "conditions": "Tvj ≥ 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 26,+ "conditions": "for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 76,+ "conditions": "tp limited by Tvjmax, VGS = 18V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC body diode forward current",+ "symbol": "ISD",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC body diode forward current",+ "symbol": "ISD",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed body diode current",+ "symbol": "ISD,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 76,+ "conditions": "tp limited by Tvjmax",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage (max transient)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -7,+ "typ": null,+ "max": 23,+ "conditions": "Max transient voltage, < 1% duty cycle",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Recommended turn-on gate voltage",+ "symbol": "VGS,on",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 15,+ "typ": null,+ "max": 18,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Recommended turn-off gate voltage",+ "symbol": "VGS,off",+ "kind": "recommended_operating",+ "unit": "V",+ "min": null,+ "typ": 0,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Short-circuit withstand time",+ "symbol": "tSC",+ "kind": "absolute_maximum",+ "unit": "µs",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "limited by Tvjmax, TC = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "limited by Tvjmax, TC = 100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Virtual junction temperature",+ "symbol": "Tvj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Soldering temperature",+ "symbol": "Tsold",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "wave soldering only at leads, 1.6mm (0.063 in.) from case for 10 s",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Mounting torque, M3 screw",+ "symbol": "M",+ "kind": "absolute_maximum",+ "unit": "Nm",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "maximum of mounting processes: 3",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MOSFET/body diode thermal resistance, junction–case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 0.8,+ "max": 1,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction–ambient, leaded",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 60,+ "max": 83,+ "conditions": "VGS = 18V, ID = 13A, Tvj = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 76,+ "max": null,+ "conditions": "VGS = 18V, ID = 13A, Tvj = 100°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 113,+ "max": null,+ "conditions": "VGS = 18V, ID = 13A, Tvj = 175°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 80,+ "max": 106,+ "conditions": "VGS = 15V, ID = 13A, Tvj = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Body diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 4.1,+ "max": 5.2,+ "conditions": "VGS = 0V, ISD = 13A, Tvj = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Body diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 4,+ "max": null,+ "conditions": "VGS = 0V, ISD = 13A, Tvj = 100°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Body diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 3.9,+ "max": null,+ "conditions": "VGS = 0V, ISD = 13A, Tvj = 175°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3.5,+ "typ": null,+ "max": 4.5,+ "conditions": "tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3.6,+ "typ": null,+ "max": 5.7,+ "conditions": "tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 175°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.6,+ "max": 180,+ "conditions": "VGS = 0V, VDS = 1200V, Tvj = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 1.9,+ "max": null,+ "conditions": "VGS = 0V, VDS = 1200V, Tvj = 175°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 23V, VDS = 0V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": null,+ "conditions": "VGS = -7V, VDS = 0V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "VDS = 20V, ID = 13A",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Internal gate resistance",+ "symbol": "RG,int",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "f = 1MHz, VAC = 25mV",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1060,+ "max": null,+ "conditions": "VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 58,+ "max": null,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Reverse capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 6.5,+ "max": null,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Coss stored energy",+ "symbol": "Eoss",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 22,+ "max": null,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "QG",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 31,+ "max": null,+ "conditions": "VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate to source charge",+ "symbol": "QGS,pl",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate to drain charge",+ "symbol": "QGD",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 5.7,+ "max": null,+ "conditions": "Tvj = 25°C; VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "Tvj = 25°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "Tvj = 25°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "Tvj = 25°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Turn-on energy",+ "symbol": "Eon",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 181,+ "max": null,+ "conditions": "Tvj = 25°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Turn-off energy",+ "symbol": "Eoff",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 31,+ "max": null,+ "conditions": "Tvj = 25°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Total switching energy",+ "symbol": "Etot",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 212,+ "max": null,+ "conditions": "Tvj = 25°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Diode reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 180,+ "max": null,+ "conditions": "Tvj = 25°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Diode peak reverse recovery current",+ "symbol": "Irrm",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "Tvj = 25°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "Tvj = 175°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Turn-on energy",+ "symbol": "Eon",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 241,+ "max": null,+ "conditions": "Tvj = 175°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Turn-off energy",+ "symbol": "Eoff",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 33,+ "max": null,+ "conditions": "Tvj = 175°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Total switching energy",+ "symbol": "Etot",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 274,+ "max": null,+ "conditions": "Tvj = 175°C",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Diode reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 225,+ "max": null,+ "conditions": "Tvj = 175°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Diode peak reverse recovery current",+ "symbol": "Irrm",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "Tvj = 175°C",+ "source_page": 7,+ "source": "datasheet"+ }+ ] } }, "variants": [],