component
IMW120R060M1H
Public Made by Adomby adom
Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIMW120R060M1H
Infineon Technologies · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
IMW120R060M1H from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input terminal with recommended on-voltage of 18V and off-voltage of 0V; maximum transient VGS range is -7V to +23V. |
| 2 | Drain | passive | Drain terminal with maximum rated VDS of 1200V, maximum ID of 36A at TC=25°C, and RDS(on)=60mΩ at VGS=18V and ID=13A. |
| 3 | Source | power_in | Source terminal; gate voltage reference and drain current return path rated for 36A maximum DC current at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 1200 | V | Tvj ≥ 25°C | 3 | ||
| DC drain current | ID | 36 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 25°C | 3 | ||
| DC drain current | ID | 26 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 100°C | 3 | ||
| Pulsed drain current | ID,pulse | 76 | A | tp limited by Tvjmax, VGS = 18V | 3 | ||
| DC body diode forward current | ISD | 36 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 25°C | 3 | ||
| DC body diode forward current | ISD | 22 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 100°C | 3 | ||
| Pulsed body diode current | ISD,pulse | 76 | A | tp limited by Tvjmax | 3 | ||
| Gate-source voltage (max transient) | VGS | -7 | 23 | V | Max transient voltage, < 1% duty cycle | 3 | |
| Recommended turn-on gate voltage | VGS,on | 15 | 18 | V | 3 | ||
| Recommended turn-off gate voltage | VGS,off | 0 | V | 3 | |||
| Short-circuit withstand time | tSC | 3 | µs | VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C | 3 | ||
| Power dissipation | Ptot | 150 | W | limited by Tvjmax, TC = 25°C | 3 | ||
| Power dissipation | Ptot | 75 | W | limited by Tvjmax, TC = 100°C | 3 | ||
| Virtual junction temperature | Tvj | -55 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | Tsold | 260 | °C | wave soldering only at leads, 1.6mm (0.063 in.) from case for 10 s | 3 | ||
| Mounting torque, M3 screw | M | 0.6 | Nm | maximum of mounting processes: 3 | 3 | ||
| MOSFET/body diode thermal resistance, junction–case | Rth(j-c) | 0.8 | 1 | K/W | 4 | ||
| Thermal resistance, junction–ambient, leaded | Rth(j-a) | 62 | K/W | 4 | |||
| Drain-source on-state resistance | RDS(on) | 60 | 83 | mΩ | VGS = 18V, ID = 13A, Tvj = 25°C | 5 | |
| Drain-source on-state resistance | RDS(on) | 76 | mΩ | VGS = 18V, ID = 13A, Tvj = 100°C | 5 | ||
| Drain-source on-state resistance | RDS(on) | 113 | mΩ | VGS = 18V, ID = 13A, Tvj = 175°C | 5 | ||
| Drain-source on-state resistance | RDS(on) | 80 | 106 | mΩ | VGS = 15V, ID = 13A, Tvj = 25°C | 5 | |
| Body diode forward voltage | VSD | 4.1 | 5.2 | V | VGS = 0V, ISD = 13A, Tvj = 25°C | 5 | |
| Body diode forward voltage | VSD | 4 | V | VGS = 0V, ISD = 13A, Tvj = 100°C | 5 | ||
| Body diode forward voltage | VSD | 3.9 | V | VGS = 0V, ISD = 13A, Tvj = 175°C | 5 | ||
| Gate-source threshold voltage | VGS(th) | 3.5 | 4.5 | V | tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 25°C | 5 | |
| Gate-source threshold voltage | VGS(th) | 3.6 | 5.7 | V | tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 175°C | 5 | |
| Zero gate voltage drain current | IDSS | 0.6 | 180 | µA | VGS = 0V, VDS = 1200V, Tvj = 25°C | 5 | |
| Zero gate voltage drain current | IDSS | 1.9 | µA | VGS = 0V, VDS = 1200V, Tvj = 175°C | 5 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS = 23V, VDS = 0V | 5 | ||
| Gate-source leakage current | IGSS | -100 | nA | VGS = -7V, VDS = 0V | 5 | ||
| Transconductance | gfs | 7 | S | VDS = 20V, ID = 13A | 5 | ||
| Internal gate resistance | RG,int | 6 | Ω | f = 1MHz, VAC = 25mV | 5 | ||
| Input capacitance | Ciss | 1060 | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 | ||
| Output capacitance | Coss | 58 | pF | 6 | |||
| Reverse capacitance | Crss | 6.5 | pF | 6 | |||
| Coss stored energy | Eoss | 22 | µJ | 6 | |||
| Total gate charge | QG | 31 | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 | ||
| Gate to source charge | QGS,pl | 9 | nC | 6 | |||
| Gate to drain charge | QGD | 7 | nC | 6 | |||
| Turn-on delay time | td(on) | 5.7 | ns | Tvj = 25°C; VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V | 7 | ||
| Rise time | tr | 7 | ns | Tvj = 25°C | 7 | ||
| Turn-off delay time | td(off) | 13 | ns | Tvj = 25°C | 7 | ||
| Fall time | tf | 12 | ns | Tvj = 25°C | 7 | ||
| Turn-on energy | Eon | 181 | µJ | Tvj = 25°C | 7 | ||
| Turn-off energy | Eoff | 31 | µJ | Tvj = 25°C | 7 | ||
| Total switching energy | Etot | 212 | µJ | Tvj = 25°C | 7 | ||
| Diode reverse recovery charge | Qrr | 180 | nC | Tvj = 25°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs | 7 | ||
| Diode peak reverse recovery current | Irrm | 5 | A | Tvj = 25°C | 7 | ||
| Rise time | tr | 17 | ns | Tvj = 175°C | 7 | ||
| Turn-on energy | Eon | 241 | µJ | Tvj = 175°C | 7 | ||
| Turn-off energy | Eoff | 33 | µJ | Tvj = 175°C | 7 | ||
| Total switching energy | Etot | 274 | µJ | Tvj = 175°C | 7 | ||
| Diode reverse recovery charge | Qrr | 225 | nC | Tvj = 175°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs | 7 | ||
| Diode peak reverse recovery current | Irrm | 7 | A | Tvj = 175°C | 7 |
CAD (KiCad official)
- Symbol:
IMW120R060M1H - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
imw120r060m1h-etched.step/imw120r060m1h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);imw120r060m1h.step/imw120r060m1h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
ddb1352a32555ca0, retrieved 2026-09-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).