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Contents

README

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IMW120R060M1H

Infineon Technologies · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

IMW120R060M1H from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input terminal with recommended on-voltage of 18V and off-voltage of 0V; maximum transient VGS range is -7V to +23V.
2 Drain passive Drain terminal with maximum rated VDS of 1200V, maximum ID of 36A at TC=25°C, and RDS(on)=60mΩ at VGS=18V and ID=13A.
3 Source power_in Source terminal; gate voltage reference and drain current return path rated for 36A maximum DC current at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

CAD (KiCad official)

  • Symbol: IMW120R060M1H
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: imw120r060m1h-etched.step / imw120r060m1h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); imw120r060m1h.step / imw120r060m1h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 ddb1352a32555ca0, retrieved 2026-09-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF