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HYG045P03LQ1D

Public Made by Adom

by adom

HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HYG045P03LQ1D

HUAYI · MOSFETs · TO-252-2L

HYG045P03LQ1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with VGS(th) of -1.0 V min to -3.0 V max at IDS=-250uA.
2 D passive Drain (center position, connected to the exposed tab); drain-source voltage rated -30 V and continuous drain current -90 A at Tc=25°C.
3 S passive Source; P-channel MOSFET source terminal, with the body diode forward voltage of -0.82 V typ. (-1.2 V max) at ISD=-20A.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGSS 20 V 2
Junction Temperature Range TJ -55 175 C 2
Storage Temperature Range TSTG -55 175 C 2
Drain Current-Continuous IS -90 A Tc 25C; mounted on large heat sink 2
Pulsed Drain Current IDM -360 A Tc 25C 2
Continuous Drain Current ID -90 A Tc 25C 2
Continuous Drain Current ID -63.5 A Tc 100C 2
Maximum Power Dissipation PD 60 W Tc 25C 2
Maximum Power Dissipation PD 30 W Tc 100C 2
Thermal Resistance, Junction-to-Case RθJC 2.5 C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 110 C/W 2
Single Pulsed Avalanche Energy EAS 273 mJ L 0.3mH 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS 0V, IDS -250uA 2
Drain-to-Source Leakage Current IDSS -1 uA VDS -30V, VGS 0V 2
Drain-to-Source Leakage Current IDSS -50 uA TJ 125C 2
Gate Threshold Voltage VGS(th) -1 -1.2 -3 V VDS VGS, IDS -250uA 2
Gate-Source Leakage Current IGSS 100 nA VGS ±20V, VDS 0V 2
Drain-Source On-state Resistance RDS(ON) 2 4.4 5.5 mΩ VGS -10V, ID -20A 2
Drain-Source On-state Resistance RDS(ON) 7.4 9.5 mΩ VGS -4.5V, ID -20A 2
Diode Forward Voltage VSD -0.82 -1.2 V ISD -20A, VGS 0V 2

CAD (KiCad official)

  • Symbol: HYG045P03LQ1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg045p03lq1d-etched.step / hyg045p03lq1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg045p03lq1d.step / hyg045p03lq1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 546e316ece46fc7d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF