component
HYG045P03LQ1D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHYG045P03LQ1D
HUAYI · MOSFETs · TO-252-2L
HYG045P03LQ1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with VGS(th) of -1.0 V min to -3.0 V max at IDS=-250uA. |
| 2 | D | passive | Drain (center position, connected to the exposed tab); drain-source voltage rated -30 V and continuous drain current -90 A at Tc=25°C. |
| 3 | S | passive | Source; P-channel MOSFET source terminal, with the body diode forward voltage of -0.82 V typ. (-1.2 V max) at ISD=-20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGSS | 20 | V | 2 | |||
| Junction Temperature Range | TJ | -55 | 175 | C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | 2 | ||
| Drain Current-Continuous | IS | -90 | A | Tc 25C; mounted on large heat sink | 2 | ||
| Pulsed Drain Current | IDM | -360 | A | Tc 25C | 2 | ||
| Continuous Drain Current | ID | -90 | A | Tc 25C | 2 | ||
| Continuous Drain Current | ID | -63.5 | A | Tc 100C | 2 | ||
| Maximum Power Dissipation | PD | 60 | W | Tc 25C | 2 | ||
| Maximum Power Dissipation | PD | 30 | W | Tc 100C | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.5 | C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 110 | C/W | 2 | |||
| Single Pulsed Avalanche Energy | EAS | 273 | mJ | L 0.3mH | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS 0V, IDS -250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | uA | VDS -30V, VGS 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -50 | uA | TJ 125C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.2 | -3 | V | VDS VGS, IDS -250uA | 2 |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS ±20V, VDS 0V | 2 | ||
| Drain-Source On-state Resistance | RDS(ON) | 2 | 4.4 | 5.5 | mΩ | VGS -10V, ID -20A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | 7.4 | 9.5 | mΩ | VGS -4.5V, ID -20A | 2 | |
| Diode Forward Voltage | VSD | -0.82 | -1.2 | V | ISD -20A, VGS 0V | 2 |
CAD (KiCad official)
- Symbol:
HYG045P03LQ1D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hyg045p03lq1d-etched.step/hyg045p03lq1d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hyg045p03lq1d.step/hyg045p03lq1d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAYI datasheet (11 pp, sha256
546e316ece46fc7d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).