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Generated by kicad-footprint-generator · KiCad file format 20260206

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HYG045P03LQ1D

HUAYI · MOSFETs · TO-252-2L

HYG045P03LQ1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limited to ±20 V, with VGS(th) of -1.0 V min to -3.0 V max at IDS=-250uA.
2	D	passive	Drain (center position, connected to the exposed tab); drain-source voltage rated -30 V and continuous drain current -90 A at Tc=25°C.
3	S	passive	Source; P-channel MOSFET source terminal, with the body diode forward voltage of -0.82 V typ. (-1.2 V max) at ISD=-20A.

Key specifications

Parameter	Value
Manufacturer	HUAYI
Package	TO-252-2L
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			-30	V		2
Gate-Source Voltage	VGSS			20	V		2
Junction Temperature Range	TJ	-55		175	C		2
Storage Temperature Range	TSTG	-55		175	C		2
Drain Current-Continuous	IS			-90	A	Tc 25C; mounted on large heat sink	2
Pulsed Drain Current	IDM			-360	A	Tc 25C	2
Continuous Drain Current	ID			-90	A	Tc 25C	2
Continuous Drain Current	ID			-63.5	A	Tc 100C	2
Maximum Power Dissipation	PD			60	W	Tc 25C	2
Maximum Power Dissipation	PD			30	W	Tc 100C	2
Thermal Resistance, Junction-to-Case	RθJC			2.5	C/W		2
Thermal Resistance, Junction-to-Ambient	RθJA			110	C/W		2
Single Pulsed Avalanche Energy	EAS			273	mJ	L 0.3mH	2
Drain-Source Breakdown Voltage	BVDSS	-30			V	VGS 0V, IDS -250uA	2
Drain-to-Source Leakage Current	IDSS			-1	uA	VDS -30V, VGS 0V	2
Drain-to-Source Leakage Current	IDSS			-50	uA	TJ 125C	2
Gate Threshold Voltage	VGS(th)	-1	-1.2	-3	V	VDS VGS, IDS -250uA	2
Gate-Source Leakage Current	IGSS			100	nA	VGS ±20V, VDS 0V	2
Drain-Source On-state Resistance	RDS(ON)	2	4.4	5.5	mΩ	VGS -10V, ID -20A	2
Drain-Source On-state Resistance	RDS(ON)		7.4	9.5	mΩ	VGS -4.5V, ID -20A	2
Diode Forward Voltage	VSD		-0.82	-1.2	V	ISD -20A, VGS 0V	2

CAD (KiCad official)

Symbol: HYG045P03LQ1D
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252-2L (KiCad packages3D, STEP)
3D model files: hyg045p03lq1d-etched.step / hyg045p03lq1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg045p03lq1d.step / hyg045p03lq1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUAYI datasheet (11 pp, sha256 546e316ece46fc7d, retrieved 2026-10-19, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF