# HY19P03B

**HUAYI** · MOSFETs · TO-263-2L

HY19P03B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated -30 V drain-source with -90 A continuous current at Tc=25°C, and connected to the tab. |
| 3 | S | passive | Source of the P-channel MOSFET, with a body-diode forward voltage of -1.3 V max at ISD=-45 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 |  |  | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Maximum Junction Temperature | TJ | -55 |  | 150 | °C |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 2 |
| Drain Current-Continuous | IS | -90 |  |  | A | Tc=25°C, mounted on large heat sink | 2 |
| Pulsed Drain Current | IDM | -390 |  |  | A | Tc=25°C; repetitive rating, pulse width limited by max junction temperature | 2 |
| Continuous Drain Current | ID | -90 |  |  | A | Tc=25°C | 2 |
| Continuous Drain Current | ID | -69 |  |  | A | Tc=100°C | 2 |
| Maximum Power Dissipation | PD |  |  | 96 | W | Tc=25°C | 2 |
| Maximum Power Dissipation | PD |  |  | 38.5 | W | Tc=100°C | 2 |
| Thermal Resistance, Junction-to-Case | RTJC |  |  | 1.3 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RTJA |  |  | 62.5 | °C/W | Surface mounted on FR-4 board | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 218 | mJ | L=0.3mH | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V,IDS=-250uA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-30V, VGS=0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | -50 | uA | TJ=100°C | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3 | V | VDS=VGS, IDS=-250uA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 4.7 | 6 | mΩ | VGS=-10V,ID=-45A | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 6.5 | 8 | mΩ | VGS=-4.5V,ID=-45A | 2 |
| Diode Forward Voltage | VSD |  | -0.82 | -1.3 | V | ISD=-45A,VGS=0V | 2 |
| Reverse Recovery Time | trr |  | 40 |  | ns | ISD=-45A,dI/dt=100A/us | 2 |

## CAD (KiCad official)

- Symbol: `HY19P03B`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files: `hy19p03b-etched.step` / `hy19p03b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hy19p03b.step` / `hy19p03b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUAYI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907384223223808) (10 pp, sha256 `33fba48cb1173163`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hy19p03b-datasheet.pdf)