component

HY19P03B

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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HY19P03B

HUAYI · MOSFETs · TO-263-2L

HY19P03B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with gate-source voltage rated ±20 V.
2 D passive Drain of the P-channel MOSFET, rated -30 V drain-source with -90 A continuous current at Tc=25°C, and connected to the tab.
3 S passive Source of the P-channel MOSFET, with a body-diode forward voltage of -1.3 V max at ISD=-45 A.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Drain Current-Continuous IS -90 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM -390 A Tc=25°C; repetitive rating, pulse width limited by max junction temperature 2
Continuous Drain Current ID -90 A Tc=25°C 2
Continuous Drain Current ID -69 A Tc=100°C 2
Maximum Power Dissipation PD 96 W Tc=25°C 2
Maximum Power Dissipation PD 38.5 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RTJC 1.3 °C/W 2
Thermal Resistance, Junction-to-Ambient RTJA 62.5 °C/W Surface mounted on FR-4 board 2
Single Pulsed Avalanche Energy EAS 218 mJ L=0.3mH 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V,IDS=-250uA 2
Drain-to-Source Leakage Current IDSS -1 uA VDS=-30V, VGS=0V 2
Drain-to-Source Leakage Current IDSS -50 uA TJ=100°C 2
Gate Threshold Voltage VGS(th) -1 -1.7 -3 V VDS=VGS, IDS=-250uA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 4.7 6 mΩ VGS=-10V,ID=-45A 2
Drain-Source On-state Resistance RDS(ON) 6.5 8 mΩ VGS=-4.5V,ID=-45A 2
Diode Forward Voltage VSD -0.82 -1.3 V ISD=-45A,VGS=0V 2
Reverse Recovery Time trr 40 ns ISD=-45A,dI/dt=100A/us 2

CAD (KiCad official)

  • Symbol: HY19P03B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hy19p03b-etched.step / hy19p03b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hy19p03b.step / hy19p03b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 33fba48cb1173163, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF