component
HY19P03B
Public Made by Adomby adom
HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
hy19p03b: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -21,6 +21,35 @@ HY19P03B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | -30 | | | V | | 2 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |+| Maximum Junction Temperature | TJ | -55 | | 150 | °C | | 2 |+| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 2 |+| Drain Current-Continuous | IS | -90 | | | A | Tc=25°C, mounted on large heat sink | 2 |+| Pulsed Drain Current | IDM | -390 | | | A | Tc=25°C; repetitive rating, pulse width limited by max junction temperature | 2 |+| Continuous Drain Current | ID | -90 | | | A | Tc=25°C | 2 |+| Continuous Drain Current | ID | -69 | | | A | Tc=100°C | 2 |+| Maximum Power Dissipation | PD | | | 96 | W | Tc=25°C | 2 |+| Maximum Power Dissipation | PD | | | 38.5 | W | Tc=100°C | 2 |+| Thermal Resistance, Junction-to-Case | RTJC | | | 1.3 | °C/W | | 2 |+| Thermal Resistance, Junction-to-Ambient | RTJA | | | 62.5 | °C/W | Surface mounted on FR-4 board | 2 |+| Single Pulsed Avalanche Energy | EAS | | | 218 | mJ | L=0.3mH | 2 |+| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V,IDS=-250uA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | -1 | uA | VDS=-30V, VGS=0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | -50 | uA | TJ=100°C | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3 | V | VDS=VGS, IDS=-250uA | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 4.7 | 6 | mΩ | VGS=-10V,ID=-45A | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 6.5 | 8 | mΩ | VGS=-4.5V,ID=-45A | 2 |+| Diode Forward Voltage | VSD | | -0.82 | -1.3 | V | ISD=-45A,VGS=0V | 2 |+| Reverse Recovery Time | trr | | 40 | | ns | ISD=-45A,dI/dt=100A/us | 2 |+ ## CAD (KiCad official) - Symbol: `HY19P03B`
page.json+272−1@@ -149,6 +149,277 @@ "Package": "TO-263-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "33fba48cb1173163",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -90,+ "typ": null,+ "max": null,+ "conditions": "Tc=25°C, mounted on large heat sink",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -390,+ "typ": null,+ "max": null,+ "conditions": "Tc=25°C; repetitive rating, pulse width limited by max junction temperature",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -90,+ "typ": null,+ "max": null,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -69,+ "typ": null,+ "max": null,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 96,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 38.5,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RTJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RTJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "Surface mounted on FR-4 board",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 218,+ "conditions": "L=0.3mH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V,IDS=-250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-30V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "TJ=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.7,+ "max": -3,+ "conditions": "VDS=VGS, IDS=-250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.7,+ "max": 6,+ "conditions": "VGS=-10V,ID=-45A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.5,+ "max": 8,+ "conditions": "VGS=-4.5V,ID=-45A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.82,+ "max": -1.3,+ "conditions": "ISD=-45A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 40,+ "max": null,+ "conditions": "ISD=-45A,dI/dt=100A/us",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +461,4 @@ "visibility": { "public": true }-}+}