# HXY5N10MI

**HXY MOSFET** · MOSFETs · SOT-23-3L

HXY5N10MI from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the part is rated for 100 V drain-source voltage and 5 A continuous drain current. |
| 3 | S | passive | Source terminal; the reference for gate-source voltage and the drain-source diode, which is rated 3 A forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 5 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 20 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | °C |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 100 | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) |  | 100 | 120 | mΩ | VGS=10V, ID=3A | 2 |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) |  | 130 | 143 | mΩ | VGS=4.5V, ID=3A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=3A | 2 |
| Diode Forward Current | IS |  |  | 3 | A | Note 2 | 2 |

## CAD (KiCad official)

- Symbol: `HXY5N10MI`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `hxy5n10mi-etched.step` / `hxy5n10mi-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy5n10mi.step` / `hxy5n10mi.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758128305982066688) (7 pp, sha256 `b93ef16cb4cf64db`, retrieved 2026-10-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hxy5n10mi-datasheet.pdf)