component
HXY5N10MI
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
hxy5n10mi: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -21,6 +21,28 @@ HXY5N10MI from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 100 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current-Continuous | ID | | | 5 | A | | 1 |+| Drain Current-Pulsed | IDM | | | 20 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |+| Maximum Power Dissipation | PD | | | 1.5 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | °C | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 100 | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V ID=250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V,VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | | 100 | 120 | mΩ | VGS=10V, ID=3A | 2 |+| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | | 130 | 143 | mΩ | VGS=4.5V, ID=3A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=3A | 2 |+| Diode Forward Current | IS | | | 3 | A | Note 2 | 2 |+ ## CAD (KiCad official) - Symbol: `HXY5N10MI`
page.json+188−1@@ -147,6 +147,193 @@ "Package": "SOT-23-3L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b93ef16cb4cf64db",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Note 1: repetitive rating, pulse width limited by max junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=100V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.5,+ "max": 2,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS=10V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 100,+ "max": 120,+ "conditions": "VGS=10V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS=4.5V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 130,+ "max": 143,+ "conditions": "VGS=4.5V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V,IS=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "Note 2",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +376,4 @@ "visibility": { "public": true }-}+}