component

HXY5N10MI

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 18d ago
viewers hxy5n10mi: viewers · Ray 18d ago
hxy5n10mi-etched.glb Publish 0.1.0 · Ray 18d ago
hxy5n10mi-etched.step hxy5n10mi: factory component page (tier=lcsc) · Ray 18d ago
hxy5n10mi-hero.glb hxy5n10mi: hero GLB from the etched model (keeps the MPN mark) · Ray 18d ago
hxy5n10mi-hero.overlay.json Publish 0.1.0 · Ray 18d ago
hxy5n10mi.glb Publish 0.1.0 · Ray 18d ago
hxy5n10mi.kicad_mod Publish 0.1.0 · Ray 18d ago
hxy5n10mi.kicad_sym Publish 0.1.0 · Ray 18d ago
hxy5n10mi.lbr Publish 0.1.0 · Ray 18d ago
hxy5n10mi.step Publish 0.1.0 · Ray 18d ago
package.json Publish 0.1.0 · Ray 18d ago
page.json hxy5n10mi: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 16d ago
README.md hxy5n10mi: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 16d ago

HXY5N10MI

HXY MOSFET · MOSFETs · SOT-23-3L

HXY5N10MI from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated ±20 V in the absolute maximum ratings.
2 D passive Drain terminal; the part is rated for 100 V drain-source voltage and 5 A continuous drain current.
3 S passive Source terminal; the reference for gate-source voltage and the drain-source diode, which is rated 3 A forward current.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 5 A 1
Drain Current-Pulsed IDM 20 A Note 1: repetitive rating, pulse width limited by max junction temperature 1
Maximum Power Dissipation PD 1.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 100 °C/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 100 120 mΩ VGS=10V, ID=3A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 130 143 mΩ VGS=4.5V, ID=3A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=3A 2
Diode Forward Current IS 3 A Note 2 2

CAD (KiCad official)

  • Symbol: HXY5N10MI
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: hxy5n10mi-etched.step / hxy5n10mi-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy5n10mi.step / hxy5n10mi.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 b93ef16cb4cf64db, retrieved 2026-10-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF