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HUF75345P3

onsemi · MOSFETs · TO-220-3

HUF75345P3 from onsemi, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated ±20 V (VGS).
2 D passive Drain terminal, rated 55 V drain-to-source (VDSS) and 75 A continuous drain current (ID); the drain is also connected to the metal tab.
3 S passive Source terminal; the source-to-drain diode voltage is 1.25 V at ISD = 75 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 55 V Note 1: TJ = 25°C to 150°C 2
Drain to Gate Voltage VDGR 55 V RGS = 20 k (Note 1) 2
Gate to Source Voltage VGS -20 20 V 2
Drain Current - Continuous ID 75 A Figure 2 2
Power Dissipation PD 325 W TC = 25°C 2
Power Dissipation Derating above 25°C PD 2.17 W/°C Derate above 25°C 2
Operating and Storage Temperature TJ, TSTG -55 175 °C 2
Maximum Temperature for Soldering Leads TL 300 °C 0.063 in (1.6 mm) from case for 10 s 2
Maximum Temperature for Soldering Leads Package Body Tpkg 260 °C Package body for 10 s 2
Drain to Source Breakdown Voltage BVDSS 55 V ID = 250 A, VGS = 0 V (Figure 11) 3
Zero Gate Voltage Drain Current IDSS 1 A VDS = 50 V, VGS = 0 V 3
Zero Gate Voltage Drain Current at TC = 150C IDSS 250 A VDS = 45 V, VGS = 0 V, TC = 150C 3
Gate to Source Leakage Current IGSS -100 100 nA VGS = ±20 V 3
Gate to Source Threshold Voltage VGS(TH) 2 4 V VGS = VDS, ID = 250 A (Figure 10) 3
Drain to Source On Resistance RDS(ON) 0.006 0.007 Ω ID = 75 A, VGS = 10 V (Figure 9) 3
Source to Drain Diode Voltage VSD 1.25 V ISD = 75 A 3
Thermal Resistance Junction to Case RθJC 0.46 °C/W Figure 3 3
Thermal Resistance Junction to Ambient TO-220, D2PAK RθJA 62 °C/W 3
Total Gate Charge Qg(tot) 220 275 nC VGS = 0 V to 20 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) 3
Gate Charge at 10 V Qg(10) 125 165 nC VGS = 0 V to 10 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) 3
Threshold Gate Charge Qg(th) 6.8 10 nC VGS = 0 V to 2 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) 3
Gate to Source Gate Charge Qgs 14 nC VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) 3
Gate to Drain Miller Charge Qgd 58 nC 3
Input Capacitance Ciss 4000 pF VDS = 25 V, VGS = 0 V, f = 1 MHz (Figure 12) 3
Output Capacitance Coss 1450 pF 3
Reverse Transfer Capacitance Crss 450 pF 3
Reverse Recovery Time trr 55 ns ISD = 75 A, dlSD/dt = 100 A/s 3
Reverse Recovered Charge QRR 80 nC ISD = 75 A, dlSD/dt = 100 A/s 3
Turn-On Time tON 195 ns VDD = 30 V, ID = 75 A, RL = 0.4 Ω, VGS = 10 V, RGS = 2.5 Ω 3
Turn-On Delay Time td(ON) 14 ns VGS = 10 V 3
Rise Time tr 118 ns VGS = 10 V 3
Turn-Off Delay Time td(OFF) 42 ns VGS = 10 V 3
Fall Time tf 26 ns VGS = 10 V 3
Turn-Off Time tOFF 98 ns VGS = 10 V 3

CAD (KiCad official)

  • Symbol: HUF75345P3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: huf75345p3-etched.step / huf75345p3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); huf75345p3.step / huf75345p3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (16 pp, sha256 a6bc3ce811f838ac, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF