component
HUF75345P3
Public Made by Adomby adom
onsemi MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| huf75345p3-etched.glb | 7d ago |
| huf75345p3-etched.step | 7d ago |
| huf75345p3-hero.glb | 7d ago |
| huf75345p3-hero.overlay.json | 7d ago |
| huf75345p3.glb | 7d ago |
| huf75345p3.kicad_mod | 7d ago |
| huf75345p3.kicad_sym | 7d ago |
| huf75345p3.lbr | 7d ago |
| huf75345p3.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| verification.json | 7d ago |
HUF75345P3
onsemi · MOSFETs · TO-220-3
HUF75345P3 from onsemi, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-to-source voltage is rated ±20 V (VGS). |
| 2 | D | passive | Drain terminal, rated 55 V drain-to-source (VDSS) and 75 A continuous drain current (ID); the drain is also connected to the metal tab. |
| 3 | S | passive | Source terminal; the source-to-drain diode voltage is 1.25 V at ISD = 75 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 55 | V | Note 1: TJ = 25°C to 150°C | 2 | ||
| Drain to Gate Voltage | VDGR | 55 | V | RGS = 20 k (Note 1) | 2 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current - Continuous | ID | 75 | A | Figure 2 | 2 | ||
| Power Dissipation | PD | 325 | W | TC = 25°C | 2 | ||
| Power Dissipation Derating above 25°C | PD | 2.17 | W/°C | Derate above 25°C | 2 | ||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Maximum Temperature for Soldering Leads | TL | 300 | °C | 0.063 in (1.6 mm) from case for 10 s | 2 | ||
| Maximum Temperature for Soldering Leads Package Body | Tpkg | 260 | °C | Package body for 10 s | 2 | ||
| Drain to Source Breakdown Voltage | BVDSS | 55 | V | ID = 250 A, VGS = 0 V (Figure 11) | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 50 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current at TC = 150C | IDSS | 250 | A | VDS = 45 V, VGS = 0 V, TC = 150C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V | 3 | |
| Gate to Source Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS = VDS, ID = 250 A (Figure 10) | 3 | |
| Drain to Source On Resistance | RDS(ON) | 0.006 | 0.007 | Ω | ID = 75 A, VGS = 10 V (Figure 9) | 3 | |
| Source to Drain Diode Voltage | VSD | 1.25 | V | ISD = 75 A | 3 | ||
| Thermal Resistance Junction to Case | RθJC | 0.46 | °C/W | Figure 3 | 3 | ||
| Thermal Resistance Junction to Ambient TO-220, D2PAK | RθJA | 62 | °C/W | 3 | |||
| Total Gate Charge | Qg(tot) | 220 | 275 | nC | VGS = 0 V to 20 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 | |
| Gate Charge at 10 V | Qg(10) | 125 | 165 | nC | VGS = 0 V to 10 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 | |
| Threshold Gate Charge | Qg(th) | 6.8 | 10 | nC | VGS = 0 V to 2 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 | |
| Gate to Source Gate Charge | Qgs | 14 | nC | VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 | ||
| Gate to Drain Miller Charge | Qgd | 58 | nC | 3 | |||
| Input Capacitance | Ciss | 4000 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz (Figure 12) | 3 | ||
| Output Capacitance | Coss | 1450 | pF | 3 | |||
| Reverse Transfer Capacitance | Crss | 450 | pF | 3 | |||
| Reverse Recovery Time | trr | 55 | ns | ISD = 75 A, dlSD/dt = 100 A/s | 3 | ||
| Reverse Recovered Charge | QRR | 80 | nC | ISD = 75 A, dlSD/dt = 100 A/s | 3 | ||
| Turn-On Time | tON | 195 | ns | VDD = 30 V, ID = 75 A, RL = 0.4 Ω, VGS = 10 V, RGS = 2.5 Ω | 3 | ||
| Turn-On Delay Time | td(ON) | 14 | ns | VGS = 10 V | 3 | ||
| Rise Time | tr | 118 | ns | VGS = 10 V | 3 | ||
| Turn-Off Delay Time | td(OFF) | 42 | ns | VGS = 10 V | 3 | ||
| Fall Time | tf | 26 | ns | VGS = 10 V | 3 | ||
| Turn-Off Time | tOFF | 98 | ns | VGS = 10 V | 3 |
CAD (KiCad official)
- Symbol:
HUF75345P3 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
huf75345p3-etched.step/huf75345p3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);huf75345p3.step/huf75345p3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (16 pp, sha256
a6bc3ce811f838ac, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).