component
HUF75345P3
Public Made by Adomby adom
onsemi MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.md+80docs/hero.pngdocs/huf75345p3-datasheet.pdf+6091huf75345p3-etched.glbhuf75345p3-hero.glbhuf75345p3-hero.overlay.json+155huf75345p3.glbhuf75345p3.kicad_mod+193huf75345p3.kicad_sym+25huf75345p3.lbr+111huf75345p3.step+1969package.json+165page.json+171viewers/footprint.html+1viewers/symbol.html+1README.mdadded+80@@ -0,0 +1,80 @@+# HUF75345P3++**onsemi** · MOSFETs · TO-220-3++HUF75345P3 from onsemi, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate terminal; gate-to-source voltage is rated ±20 V (VGS). |+| 2 | D | passive | Drain terminal, rated 55 V drain-to-source (VDSS) and 75 A continuous drain current (ID); the drain is also connected to the metal tab. |+| 3 | S | passive | Source terminal; the source-to-drain diode voltage is 1.25 V at ISD = 75 A. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | onsemi |+| Package | TO-220-3 |+| Category | Triode/MOS Tube/Transistor |+| Pins | 3 |++## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain to Source Voltage | VDSS | | | 55 | V | Note 1: TJ = 25°C to 150°C | 2 |+| Drain to Gate Voltage | VDGR | | | 55 | V | RGS = 20 k (Note 1) | 2 |+| Gate to Source Voltage | VGS | -20 | | 20 | V | | 2 |+| Drain Current - Continuous | ID | | | 75 | A | Figure 2 | 2 |+| Power Dissipation | PD | | | 325 | W | TC = 25°C | 2 |+| Power Dissipation Derating above 25°C | PD | | | 2.17 | W/°C | Derate above 25°C | 2 |+| Operating and Storage Temperature | TJ, TSTG | -55 | | 175 | °C | | 2 |+| Maximum Temperature for Soldering Leads | TL | | | 300 | °C | 0.063 in (1.6 mm) from case for 10 s | 2 |+| Maximum Temperature for Soldering Leads Package Body | Tpkg | | | 260 | °C | Package body for 10 s | 2 |+| Drain to Source Breakdown Voltage | BVDSS | 55 | | | V | ID = 250 A, VGS = 0 V (Figure 11) | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | A | VDS = 50 V, VGS = 0 V | 3 |+| Zero Gate Voltage Drain Current at TC = 150C | IDSS | | | 250 | A | VDS = 45 V, VGS = 0 V, TC = 150C | 3 |+| Gate to Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20 V | 3 |+| Gate to Source Threshold Voltage | VGS(TH) | 2 | | 4 | V | VGS = VDS, ID = 250 A (Figure 10) | 3 |+| Drain to Source On Resistance | RDS(ON) | | 0.006 | 0.007 | Ω | ID = 75 A, VGS = 10 V (Figure 9) | 3 |+| Source to Drain Diode Voltage | VSD | | | 1.25 | V | ISD = 75 A | 3 |+| Thermal Resistance Junction to Case | RθJC | | | 0.46 | °C/W | Figure 3 | 3 |+| Thermal Resistance Junction to Ambient TO-220, D2PAK | RθJA | | | 62 | °C/W | | 3 |+| Total Gate Charge | Qg(tot) | | 220 | 275 | nC | VGS = 0 V to 20 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 |+| Gate Charge at 10 V | Qg(10) | | 125 | 165 | nC | VGS = 0 V to 10 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 |+| Threshold Gate Charge | Qg(th) | | 6.8 | 10 | nC | VGS = 0 V to 2 V, VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 |+| Gate to Source Gate Charge | Qgs | | 14 | | nC | VDD = 30 V, ID = 75 A, RL = 0.4 Ω, Ig(REF) = 1.0 mA (Figure 13) | 3 |+| Gate to Drain Miller Charge | Qgd | | 58 | | nC | | 3 |+| Input Capacitance | Ciss | | 4000 | | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz (Figure 12) | 3 |+| Output Capacitance | Coss | | 1450 | | pF | | 3 |+| Reverse Transfer Capacitance | Crss | | 450 | | pF | | 3 |+| Reverse Recovery Time | trr | | 55 | | ns | ISD = 75 A, dlSD/dt = 100 A/s | 3 |+| Reverse Recovered Charge | QRR | | 80 | | nC | ISD = 75 A, dlSD/dt = 100 A/s | 3 |+| Turn-On Time | tON | | 195 | | ns | VDD = 30 V, ID = 75 A, RL = 0.4 Ω, VGS = 10 V, RGS = 2.5 Ω | 3 |+| Turn-On Delay Time | td(ON) | | 14 | | ns | VGS = 10 V | 3 |+| Rise Time | tr | | 118 | | ns | VGS = 10 V | 3 |+| Turn-Off Delay Time | td(OFF) | | 42 | | ns | VGS = 10 V | 3 |+| Fall Time | tf | | 26 | | ns | VGS = 10 V | 3 |+| Turn-Off Time | tOFF | | 98 | | ns | VGS = 10 V | 3 |++## CAD (KiCad official)++- Symbol: `HUF75345P3`+- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`+- 3D model: TO-220-3 (KiCad packages3D, STEP)+- 3D model files: `huf75345p3-etched.step` / `huf75345p3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `huf75345p3.step` / `huf75345p3.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/huf75345p3-d.pdf) (16 pp, sha256 `a6bc3ce811f838ac`, retrieved 2026-10-31, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/huf75345p3-datasheet.pdf)
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