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HTPD4E1U06DCKR

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HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HTPD4E1U06DCKR

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23-6L

HTPD4E1U06DCKR from HXY MOSFET, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IO1 passive ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND.
2 GND power_in Negative rail of the diode array, connected to system ground, with the zener diode between this pin and the positive rail pin.
3 IO2 passive ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND.
4 IO3 passive ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND.
5 VCC power_in Positive rail of the diode array, connected through the integrated zener diode to GND, so positive ESD is clamped to the zener voltage (VBR 6V max at 1mA).
6 IO4 passive ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-6L
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power (8/20μs) PPP 55 W 8/20μs 1
Peak Pulse Current (8/20μs) IPP 4 A 8/20μs 1
ESD per IEC 61000-4-2 (Contact) VESD2 -15 15 kV IEC 61000-4-2 contact discharge 1
Operating Temperature Range Topr -55 125 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Reverse Working Voltage VRWM 5 V Any I/O pin to GND 2
Reverse Breakdown Voltage VBR 6 V It =1mA; Any I/O pin to GND 2
Reverse Leakage Current IR 1 μA VRWM =5V, T=25°C; Any I/O pin to GND 2
Positive Clamping Voltage VC1 8.5 12 V IPP=4A, tP=8/20μs; Positive pulse; Any I/O pin to GND 2
Junction Capacitance Between Channel (I/O pins) CJ1 0.3 0.4 pF VR=0V, f=1MHz; Between I/O pins 2
Junction Capacitance Between I/O and GND CJ2 0.6 0.8 pF VR=0V, f=1MHz; Any I/O pin to GND 2
Negative Clamping Voltage VC2 1.8 V IPP=4A, tP=8/20μs; Negative pulse; Any I/O pin to GND 2

CAD (KiCad official)

  • Symbol: HTPD4E1U06DCKR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: htpd4e1u06dckr-etched.step / htpd4e1u06dckr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); htpd4e1u06dckr.step / htpd4e1u06dckr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 190e9d6c9ff0f78d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF