# HTPD4E1U06DCKR

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · SOT-23-6L

HTPD4E1U06DCKR from HXY MOSFET, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IO1 | passive | ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND. |
| 2 | GND | power_in | Negative rail of the diode array, connected to system ground, with the zener diode between this pin and the positive rail pin. |
| 3 | IO2 | passive | ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND. |
| 4 | IO3 | passive | ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND. |
| 5 | VCC | power_in | Positive rail of the diode array, connected through the integrated zener diode to GND, so positive ESD is clamped to the zener voltage (VBR 6V max at 1mA). |
| 6 | IO4 | passive | ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-6L |
| Category | Circuit Protection |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (8/20μs) | PPP |  |  | 55 | W | 8/20μs | 1 |
| Peak Pulse Current (8/20μs) | IPP |  |  | 4 | A | 8/20μs | 1 |
| ESD per IEC 61000-4-2 (Contact) | VESD2 | -15 |  | 15 | kV | IEC 61000-4-2 contact discharge | 1 |
| Operating Temperature Range | Topr | -55 |  | 125 | °C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Reverse Working Voltage | VRWM |  |  | 5 | V | Any I/O pin to GND | 2 |
| Reverse Breakdown Voltage | VBR | 6 |  |  | V | It =1mA; Any I/O pin to GND | 2 |
| Reverse Leakage Current | IR |  |  | 1 | μA | VRWM =5V, T=25°C; Any I/O pin to GND | 2 |
| Positive Clamping Voltage | VC1 |  | 8.5 | 12 | V | IPP=4A, tP=8/20μs; Positive pulse; Any I/O pin to GND | 2 |
| Junction Capacitance Between Channel (I/O pins) | CJ1 |  | 0.3 | 0.4 | pF | VR=0V, f=1MHz; Between I/O pins | 2 |
| Junction Capacitance Between I/O and GND | CJ2 |  | 0.6 | 0.8 | pF | VR=0V, f=1MHz; Any I/O pin to GND | 2 |
| Negative Clamping Voltage | VC2 |  | 1.8 |  | V | IPP=4A, tP=8/20μs; Negative pulse; Any I/O pin to GND | 2 |

## CAD (KiCad official)

- Symbol: `HTPD4E1U06DCKR`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `htpd4e1u06dckr-etched.step` / `htpd4e1u06dckr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `htpd4e1u06dckr.step` / `htpd4e1u06dckr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438679091748864) (5 pp, sha256 `190e9d6c9ff0f78d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/htpd4e1u06dckr-datasheet.pdf)