HTPD4E1U06DCKR

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  "slug": "htpd4e1u06dckr",
  "title": "HTPD4E1U06DCKR",
  "brief": "HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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    "mpn": "HTPD4E1U06DCKR",
    "manufacturer": "HXY MOSFET",
    "package": "SOT-23-6L",
    "pin_count": 6,
    "category": "Circuit Protection",
    "subcategory": "ESD And Surge Protection (TVS/ESD)",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438679091748864",
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    "distributor_links": {
      "lcsc": "C42402080"
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    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "no match"
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      "mouser": {
        "pn": null,
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    "pins": [
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        "number": "1",
        "name": "IO1",
        "type": "passive",
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      },
      {
        "number": "2",
        "name": "GND",
        "type": "power_in",
        "description": "Negative rail of the diode array, connected to system ground, with the zener diode between this pin and the positive rail pin."
      },
      {
        "number": "3",
        "name": "IO2",
        "type": "passive",
        "description": "ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND."
      },
      {
        "number": "4",
        "name": "IO3",
        "type": "passive",
        "description": "ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND."
      },
      {
        "number": "5",
        "name": "VCC",
        "type": "power_in",
        "description": "Positive rail of the diode array, connected through the integrated zener diode to GND, so positive ESD is clamped to the zener voltage (VBR 6V max at 1mA)."
      },
      {
        "number": "6",
        "name": "IO4",
        "type": "passive",
        "description": "ESD-protected I/O channel with a steering diode pair to the rails, rated for IEC 61000-4-2 ±15kV contact discharge with 0.4pF max capacitance to GND."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
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        "guards": "pin_guards 0.1: passed",
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          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "cost_usd": 0.2025,
        "at": "2026-10-18T06:42:14"
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        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 6,
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        "refuses_to_fabricate": true
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "SOT-23-6L",
      "Category": "Circuit Protection",
      "Pins": "6"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "190e9d6c9ff0f78d76dfdd008438ced00d410d975abc04b9dcce3e8859913956",
      "rows": [
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          "name": "Peak Pulse Power (8/20μs)",
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          "unit": "W",
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        },
        {
          "name": "ESD per IEC 61000-4-2 (Contact)",
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          "unit": "kV",
          "min": -15,
          "typ": null,
          "max": 15,
          "conditions": "IEC 61000-4-2 contact discharge",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Temperature Range",
          "symbol": "Topr",
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          "unit": "°C",
          "min": -55,
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          "conditions": "",
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        {
          "name": "Storage Temperature Range",
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          "unit": "°C",
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          "typ": null,
          "max": null,
          "conditions": "It =1mA; Any I/O pin to GND",
          "source_page": 2,
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        },
        {
          "name": "Reverse Leakage Current",
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          "max": 1,
          "conditions": "VRWM =5V, T=25°C; Any I/O pin to GND",
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          "name": "Positive Clamping Voltage",
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          "unit": "V",
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          "max": 12,
          "conditions": "IPP=4A, tP=8/20μs; Positive pulse; Any I/O pin to GND",
          "source_page": 2,
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        },
        {
          "name": "Junction Capacitance Between Channel (I/O pins)",
          "symbol": "CJ1",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 0.3,
          "max": 0.4,
          "conditions": "VR=0V, f=1MHz; Between I/O pins",
          "source_page": 2,
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        {
          "name": "Junction Capacitance Between I/O and GND",
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          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 0.6,
          "max": 0.8,
          "conditions": "VR=0V, f=1MHz; Any I/O pin to GND",
          "source_page": 2,
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        {
          "name": "Negative Clamping Voltage",
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          "unit": "V",
          "min": null,
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          "max": null,
          "conditions": "IPP=4A, tP=8/20μs; Negative pulse; Any I/O pin to GND",
          "source_page": 2,
          "source": "datasheet"
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      ]
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  "discovery_pitch": "HTPD4E1U06DCKR (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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