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HSM6006

Public Made by Adom

by adom

HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM6006

HUASHUO · MOSFETs · SOP-8

HSM6006 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3 (VDS 60 V, ID 6.3 A at TA=25℃ total device rating).
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3 (VDS 60 V, ID 6.3 A at TA=25℃ total device rating).
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2 (VDS 60 V, ID 6.3 A at TA=25℃ total device rating).
4 G input Gate of the N-channel MOSFET, rated at ±20 V VGS maximum with threshold 1.2 V min to 2.5 V max.
5 D passive Drain of the N-channel MOSFET, tied with pins 6, 7 and 8 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V).
6 D passive Drain of the N-channel MOSFET, tied with pins 5, 7 and 8 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V).
7 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 8 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V).
8 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 7 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V).

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 6.3 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 5 A VGS @ 10V 1
Pulsed Drain Current IDM 32 A 1
Single Pulse Avalanche Energy EAS 39 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=28A 1
Avalanche Current IAS 28 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 25 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 18 mΩ VGS=10V , ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 20 mΩ VGS=4.5V , ID=4A 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 6.3 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 32 A 2
Diode Forward Voltage VSD 1 V VGS=0V , IS=A , TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.057 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -5.68 mV/℃ 2
Forward Transconductance gfs 40 S VDS=5V , ID=6A 2
Gate Resistance Rg 1.7 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 18.8 nC VDS=48V , VGS=4.5V , ID=6A 2
Gate-Source Charge Qgs 7.7 nC VDS=48V , VGS=4.5V , ID=6A 2
Gate-Drain Charge Qgd 6.2 nC VDS=48V , VGS=4.5V , ID=6A 2
Turn-On Delay Time Td(on) 7.6 ns VDD=30V , VGS=10V , RG=3.3, ID=6A 2
Rise Time Tr 8.6 ns VDD=30V , VGS=10V , RG=3.3, ID=6A 2
Turn-Off Delay Time Td(off) 47 ns VDD=30V , VGS=10V , RG=3.3, ID=6A 2
Fall Time Tf 4 ns VDD=30V , VGS=10V , RG=3.3, ID=6A 2
Input Capacitance Ciss 2423 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 145 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 97 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 15 nS IF=6A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 10.4 nC IF=6A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSM6006
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm6006-etched.step / hsm6006-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm6006.step / hsm6006.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 89265638027dd15c, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF