HSM6006

{
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  "type": "component",
  "slug": "hsm6006",
  "title": "HSM6006",
  "brief": "HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "hsm6006",
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  "component": {
    "mpn": "HSM6006",
    "manufacturer": "HUASHUO",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/c01b230d23f0a8b50778ac597e692057.pdf",
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      "lbr": "hsm6006.lbr"
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    "distributor_links": {
      "lcsc": "C2987711"
    },
    "distributor_check": {
      "checked_at": "2026-10-22T21:13:51Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
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      "mouser": {
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        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied with pins 2 and 3 (VDS 60 V, ID 6.3 A at TA=25℃ total device rating)."
      },
      {
        "number": "2",
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        "type": "passive",
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      {
        "number": "3",
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        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied with pins 1 and 2 (VDS 60 V, ID 6.3 A at TA=25℃ total device rating)."
      },
      {
        "number": "4",
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        "type": "input",
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      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied with pins 6, 7 and 8 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V)."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied with pins 5, 7 and 8 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V)."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied with pins 5, 6 and 8 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V)."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied with pins 5, 6 and 7 (60 V VDS maximum, RDS(ON) 18 mΩ max at VGS=10V)."
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  "metadata": {
    "specs": {
      "Manufacturer": "HUASHUO",
      "Package": "SOP-8",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "8"
    },
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          "name": "Operating Junction Temperature Range",
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          "name": "Thermal Resistance Junction-Ambient",
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          "name": "Thermal Resistance Junction-Case",
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          "unit": "℃/W",
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        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
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          "name": "Static Drain-Source On-Resistance",
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          "kind": "electrical",
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          "min": null,
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          "name": "BVDSS Temperature Coefficient",
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          "min": null,
          "typ": 0.057,
          "max": null,
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          "name": "Forward Transconductance",
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          "kind": "electrical",
          "unit": "S",
          "min": null,
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          "name": "Gate Resistance",
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          "source_page": 2,
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          "name": "Total Gate Charge (4.5V)",
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          "name": "Gate-Source Charge",
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          "source_page": 2,
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          "kind": "electrical",
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          "max": null,
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          "source_page": 2,
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    "name": "Ray",
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