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HSI1026XT1GE3

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HXY MOSFET MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSI1026XT1GE3

HXY MOSFET · MOSFETs · SOT-363

HSI1026XT1GE3 from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel); VDS rated 60 V, ID 0.115 A continuous.
2 G1 input Gate of MOSFET 1; maximum gate-source voltage ±20 V, threshold 1 V min to 2.5 V max at 250 µA.
3 D2 passive Drain of MOSFET 2 (N-channel); VDS rated 60 V, ID 0.115 A continuous.
4 S2 passive Source of MOSFET 2 (N-channel); VDS rated 60 V, ID 0.115 A continuous.
5 G2 input Gate of MOSFET 2; maximum gate-source voltage ±20 V, threshold 1 V min to 2.5 V max at 250 µA.
6 D1 passive Drain of MOSFET 1 (N-channel); VDS rated 60 V, ID 0.115 A continuous.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 0.115 A TC=25℃ 1
Maximum Power Dissipation PD 0.15 W TC=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TC=25℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 833 ℃/W Note 2 1
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0 V, ID=250 µA 2
Gate-threshold voltage Vth(GS) 1 1.6 2.5 V VDS=VGS, ID=250 µA 2
Gate-body leakage IGSS 80 nA VDS=0 V, VGS=±20 V 2
Zero gate voltage drain current IDSS 80 nA VDS=60 V, VGS=0 V 2
Drain-source on-resistance RDS(on) 1.3 Ω VGS=10 V, ID=115mA 2
Drain-source on-resistance RDS(on) 2 5 Ω VGS=4.5V, ID=50mA 2
Forward transconductance gfs 80 500 ms VDS=10 V, ID=200mA 2
Drain-source on-voltage VDS(on) 0.5 3.75 V VGS=10V, ID=500mA 2
Drain-source on-voltage VDS(on) 0.05 0.375 V VGS=5V, ID=50mA 2
Diode forward voltage VSD 0.55 1.2 V IS=115mA, VGS=0 V 2
Gate-Source Breakdown Voltage VGSO -21.5 -30 V IGS=±1mA(Open Drain) 2
Input capacitance Ciss 50 pF VDS=25V, VGS=0V, f=1MHz 2
Output capacitance Coss 25 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse transfer capacitance Crss 5 pF VDS=25V, VGS=0V, f=1MHz 2
Turn-on time td(on) 20 ns VDD=25 V, RL=50Ω, ID=500mA, VGEN=10V, G=25 Ω 2
Turn-off time td(off) 40 ns VDD=25 V, RL=50Ω, ID=500mA, VGEN=10V, G=25 Ω 2

CAD (KiCad official)

  • Symbol: HSI1026XT1GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: hsi1026xt1ge3-etched.step / hsi1026xt1ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsi1026xt1ge3.step / hsi1026xt1ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 db15c9b52aed7048, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF