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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

HSI1026XT1GE3

HXY MOSFET · MOSFETs · SOT-363

HSI1026XT1GE3 from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of MOSFET 1 (N-channel); VDS rated 60 V, ID 0.115 A continuous.
2	G1	input	Gate of MOSFET 1; maximum gate-source voltage ±20 V, threshold 1 V min to 2.5 V max at 250 µA.
3	D2	passive	Drain of MOSFET 2 (N-channel); VDS rated 60 V, ID 0.115 A continuous.
4	S2	passive	Source of MOSFET 2 (N-channel); VDS rated 60 V, ID 0.115 A continuous.
5	G2	input	Gate of MOSFET 2; maximum gate-source voltage ±20 V, threshold 1 V min to 2.5 V max at 250 µA.
6	D1	passive	Drain of MOSFET 1 (N-channel); VDS rated 60 V, ID 0.115 A continuous.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	SOT-363
Category	Transistors/Thyristors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			60	V	TC=25℃	1
Gate-Source Voltage	VGS	-20		20	V	TC=25℃	1
Drain Current-Continuous	ID			0.115	A	TC=25℃	1
Maximum Power Dissipation	PD			0.15	W	TC=25℃	1
Operating Junction and Storage Temperature Range	TJ,TSTG	-55		150	℃	TC=25℃	1
Thermal Resistance, Junction-to-Ambient	RθJA			833	℃/W	Note 2	1
Drain-source breakdown voltage	V(BR)DSS	60			V	VGS=0 V, ID=250 µA	2
Gate-threshold voltage	Vth(GS)	1	1.6	2.5	V	VDS=VGS, ID=250 µA	2
Gate-body leakage	IGSS			80	nA	VDS=0 V, VGS=±20 V	2
Zero gate voltage drain current	IDSS			80	nA	VDS=60 V, VGS=0 V	2
Drain-source on-resistance	RDS(on)		1.3		Ω	VGS=10 V, ID=115mA	2
Drain-source on-resistance	RDS(on)		2	5	Ω	VGS=4.5V, ID=50mA	2
Forward transconductance	gfs	80		500	ms	VDS=10 V, ID=200mA	2
Drain-source on-voltage	VDS(on)		0.5	3.75	V	VGS=10V, ID=500mA	2
Drain-source on-voltage	VDS(on)		0.05	0.375	V	VGS=5V, ID=50mA	2
Diode forward voltage	VSD		0.55	1.2	V	IS=115mA, VGS=0 V	2
Gate-Source Breakdown Voltage	VGSO	-21.5		-30	V	IGS=±1mA(Open Drain)	2
Input capacitance	Ciss			50	pF	VDS=25V, VGS=0V, f=1MHz	2
Output capacitance	Coss			25	pF	VDS=25V, VGS=0V, f=1MHz	2
Reverse transfer capacitance	Crss			5	pF	VDS=25V, VGS=0V, f=1MHz	2
Turn-on time	td(on)			20	ns	VDD=25 V, RL=50Ω, ID=500mA, VGEN=10V, G=25 Ω	2
Turn-off time	td(off)			40	ns	VDD=25 V, RL=50Ω, ID=500mA, VGEN=10V, G=25 Ω	2

CAD (KiCad official)

Symbol: HSI1026XT1GE3
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SOT-363 (KiCad packages3D, STEP)
3D model files: hsi1026xt1ge3-etched.step / hsi1026xt1ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsi1026xt1ge3.step / hsi1026xt1ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (5 pp, sha256 db15c9b52aed7048, retrieved 2026-10-27, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF