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Ray Set visibility: public 34c48a6 7d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "hsctw35n65g2v",
  "title": "HSCTW35N65G2V",
  "brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "silicon carbide (sic) devices",
    "hsctw35n65g2v",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "HSCTW35N65G2V",
    "manufacturer": "HXY MOSFET",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/7774c507c12ea19459a8d56d280a84bc.pdf",
    "parts": {
      "symbol": "hsctw35n65g2v.kicad_sym",
      "footprint": "hsctw35n65g2v.kicad_mod",
      "model_3d": "hsctw35n65g2v-hero.glb",
      "model_3d_plain": "hsctw35n65g2v-etched.glb",
      "model_3d_step": "hsctw35n65g2v-etched.step",
      "model_3d_step_plain": "hsctw35n65g2v.step",
      "lbr": "hsctw35n65g2v.lbr"
    },
    "distributor_links": {
      "lcsc": "C42389133"
    },
    "distributor_check": {
      "checked_at": "2026-10-29T01:17:52Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate drive input; the datasheet gives VGS of -5/+20 V and dynamic absolute maximum of -10/+25 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (also connected to the tab), rated for VDS of 650 V and continuous ID of 49 A at TC = 25 °C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal carrying the load current and body-diode current; the datasheet gives ID of 49 A at TC = 25 °C."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin functions are read from the schematic symbol on page 1 image: (1) is gate, (2) is drain, (3) is ; Features mention a separate driver source pin, but this TO-247-3 package has only 3 pins and no Kelv",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 8,
        "cost_usd": 0.1995,
        "at": "2026-10-29T01:17:43"
      },
      "datasheet": {
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        "pages": 8,
        "sha256": "ec7e40f2de221cce",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "hsctw35n65g2v.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          15.9,
          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-10-29",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "hsctw35n65g2v-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "3f920995bb49cba96bc784bd1bb64a32e1a86faac412cc896fdf50faf9857e99",
        "checked": "2026-10-29",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "TO-247-3",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "ec7e40f2de221cce6bb23735f13d2dbdca0436763b1daab5ff4c2331750b4258",
      "rows": [
        {
          "name": "Operating junction and storage temperature",
          "symbol": "Tj, Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-source voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 49,
          "conditions": "TC = 25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 35,
          "conditions": "TC = 100°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 123,
          "conditions": "TC = 25°C, tp limited by Tjmax",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -5,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source voltage (dynamic, absolute maximum values)",
          "symbol": "VGSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -10,
          "typ": null,
          "max": 25,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 242,
          "conditions": "TC = 25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 1000,
          "conditions": "L=10mH",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction to case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.62,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction to ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250uA",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
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  "discovery_triggers": [
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  ],
  "discovery_pitch": "HSCTW35N65G2V (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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}