component
HSCTW35N65G2V
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSCTW35N65G2V
HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
HSCTW35N65G2V from HXY MOSFET, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate drive input; the datasheet gives VGS of -5/+20 V and dynamic absolute maximum of -10/+25 V. |
| 2 | D | passive | Drain terminal (also connected to the tab), rated for VDS of 650 V and continuous ID of 49 A at TC = 25 °C. |
| 3 | S | passive | Source terminal carrying the load current and body-diode current; the datasheet gives ID of 49 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating junction and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Continuous drain current | ID | 49 | A | TC = 25°C | 1 | ||
| Continuous drain current | ID | 35 | A | TC = 100°C | 1 | ||
| Pulsed drain current | ID pulse | 123 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Gate-Source voltage | VGS | -5 | 20 | V | 1 | ||
| Gate-Source voltage (dynamic, absolute maximum values) | VGSmax | -10 | 25 | V | 1 | ||
| Power dissipation | Ptot | 242 | W | TC = 25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 1000 | mJ | L=10mH | 1 | ||
| Thermal resistance, junction to case | RthJC | 0.62 | °C/W | 1 | |||
| Thermal resistance, junction to ambient | RthJA | 40 | °C/W | 1 | |||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 |
CAD (KiCad official)
- Symbol:
HSCTW35N65G2V - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
hsctw35n65g2v-etched.step/hsctw35n65g2v-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsctw35n65g2v.step/hsctw35n65g2v.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (8 pp, sha256
ec7e40f2de221cce, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).