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HSCTW35N65G2V

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSCTW35N65G2V

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

HSCTW35N65G2V from HXY MOSFET, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate drive input; the datasheet gives VGS of -5/+20 V and dynamic absolute maximum of -10/+25 V.
2 D passive Drain terminal (also connected to the tab), rated for VDS of 650 V and continuous ID of 49 A at TC = 25 °C.
3 S passive Source terminal carrying the load current and body-diode current; the datasheet gives ID of 49 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Drain-source voltage VDS 650 V 1
Continuous drain current ID 49 A TC = 25°C 1
Continuous drain current ID 35 A TC = 100°C 1
Pulsed drain current ID pulse 123 A TC = 25°C, tp limited by Tjmax 1
Gate-Source voltage VGS -5 20 V 1
Gate-Source voltage (dynamic, absolute maximum values) VGSmax -10 25 V 1
Power dissipation Ptot 242 W TC = 25°C 1
Avalanche energy, single pulse EAS 1000 mJ L=10mH 1
Thermal resistance, junction to case RthJC 0.62 °C/W 1
Thermal resistance, junction to ambient RthJA 40 °C/W 1
Drain-source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2

CAD (KiCad official)

  • Symbol: HSCTW35N65G2V
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: hsctw35n65g2v-etched.step / hsctw35n65g2v-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsctw35n65g2v.step / hsctw35n65g2v.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 ec7e40f2de221cce, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF