component
HSCT040W120G34AG
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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HSCT040W120G34AG
HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L
HSCT040W120G34AG from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the SiC MOSFET, also connected to the TAB; the device is rated for VDSmax 1200 V at VGS = 0 V and ID = 100 μA. |
| 2 | Power Source | passive | Power source terminal carrying the main drain current path, separate from the driver source pin (pin 3). |
| 3 | Driver Source | passive | Separate source pin provided for the gate driver return, as stated by the optimized package with a separate driver source pin feature. |
| 4 | Gate | input | Gate terminal; the datasheet limits are VGSmax -8/+19 V dynamic (AC, f > 1 Hz, with -4/+19 V when using the body diode) and VGSop -4/+15 V static, with the MOSFET able to operate safely at 0/+15 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source Voltage | VDSmax | 1200 | V | VGS = 0 V, ID = 100 μA | 1 | ||
| Gate - Source Voltage (dynamic) | VGSmax | -8 | 19 | V | AC (f >1 Hz) Note 1 | 1 | |
| Gate - Source Voltage (static) | VGSop | -4 | 15 | V | Static | 1 | |
| Continuous Drain Current | ID | 63 | A | VGS = 15 V, TC = 25˚C | 1 | ||
| Continuous Drain Current | ID | 48 | A | VGS = 15 V, TC = 100˚C | 1 | ||
| Pulsed Drain Current | ID(pulse) | 120 | A | Pulse width tP limited by Tjmax | 1 | ||
| Power Dissipation | PD | 283 | W | TC = 25˚C, TJ = 175 ˚C | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -40 | 175 | ˚C | 1 | ||
| Solder Temperature | TL | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 | ||
| Gate - Source Voltage (safe operation, per Note 2) | 0 | 15 | V | MOSFET can also safely operate at 0/+15 V (Note 2) | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 100 μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 11.5 mA, Fig. 11 | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | V | VDS = VGS, ID = 11.5 mA, TJ = 175ºC | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 50 | μA | VDS = 1200 V, VGS = 0 V | 2 | |
| Gate-Source Leakage Current | IGSS | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 23 | 32 | 43 | mΩ | VGS = 15 V, ID = 40 A, Fig. 4, 5, 6 | 2 |
| Drain-Source On-State Resistance | RDS(on) | 57.6 | mΩ | VGS = 15 V, ID = 40 A, TJ = 175ºC | 2 | ||
| Diode Forward Voltage | VSD | 4.6 | V | VGS = -4 V, ISD = 20 A, TJ = 25 °C, Fig. 8, 9, 10 | 2 | ||
| Diode Forward Voltage | VSD | 4.2 | V | VGS = -4 V, ISD = 20 A, TJ = 175 °C | 2 | ||
| Continuous Diode Forward Current | IS | 62 | A | VGS = -4 V, TC = 25˚C, Note 1 | 2 | ||
| Diode pulse Current | IS, pulse | 120 | A | VGS = -4 V, pulse width tP limited by Tjmax, Note 1 | 2 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.45 | °C/W | Fig. 21 | 2 | ||
| Thermal Resistance From Junction to Ambient | RθJA | 40 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
HSCT040W120G34AG - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
hsct040w120g34ag-etched.step/hsct040w120g34ag-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsct040w120g34ag.step/hsct040w120g34ag.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (11 pp, sha256
37681af3685aa9ec, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).