main
Ray Set visibility: public db1f985 17h ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "hsct040w120g34ag",
  "title": "HSCT040W120G34AG",
  "brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "silicon carbide (sic) devices",
    "hsct040w120g34ag",
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    "extractor-text"
  ],
  "component": {
    "mpn": "HSCT040W120G34AG",
    "manufacturer": "HXY MOSFET",
    "package": "TO-247-4L",
    "pin_count": 4,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/2a6c8f212cc3414e31c67a66b086746b.pdf",
    "parts": {
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      "footprint": "hsct040w120g34ag.kicad_mod",
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      "lbr": "hsct040w120g34ag.lbr"
    },
    "distributor_links": {
      "lcsc": "C42389147"
    },
    "distributor_check": {
      "checked_at": "2026-11-04T12:54:07Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal of the SiC MOSFET, also connected to the TAB; the device is rated for VDSmax 1200 V at VGS = 0 V and ID = 100 μA."
      },
      {
        "number": "2",
        "name": "Power Source",
        "type": "passive",
        "description": "Power source terminal carrying the main drain current path, separate from the driver source pin (pin 3)."
      },
      {
        "number": "3",
        "name": "Driver Source",
        "type": "passive",
        "description": "Separate source pin provided for the gate driver return, as stated by the optimized package with a separate driver source pin feature."
      },
      {
        "number": "4",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal; the datasheet limits are VGSmax -8/+19 V dynamic (AC, f > 1 Hz, with -4/+19 V when using the body diode) and VGSop -4/+15 V static, with the MOSFET able to operate safely at 0/+15 V."
      }
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin numbers and names are taken from the ordering table on page 1 (Drain Pin 1 TAB, Power Source Pin; The datasheet does not state pin electrical types; the KiCad types for the source pins (passive) and; The datasheet does not give a specific pin-level limit for pins 2 and 3 beyond the device-level rati"
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        "pages_sent": 11,
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        "at": "2026-11-04T12:53:57"
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        "pages": 11,
        "sha256": "37681af3685aa9ec",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          15.9,
          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.414,
        "footprint_binding": "identity",
        "sha256": "976ae560ee073c7450ef39d3d2fc3006e5eed9c51132093905f3e98066a0fc8d",
        "checked": "2026-11-04",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "sha256": "02c83d3c24fdbe2b05e23a2d8f6f018b2b949a13a35a5e1006d0e37c24a08977",
        "checked": "2026-11-04",
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  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "TO-247-4L",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "4"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "37681af3685aa9ecc55ed9bc9534d198975b108260ca1046d56ad8858b9f2014",
      "rows": [
        {
          "name": "Drain - Source Voltage",
          "symbol": "VDSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1200,
          "conditions": "VGS = 0 V, ID = 100 μA",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate - Source Voltage (dynamic)",
          "symbol": "VGSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -8,
          "typ": null,
          "max": 19,
          "conditions": "AC (f >1 Hz) Note 1",
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        },
        {
          "name": "Gate - Source Voltage (static)",
          "symbol": "VGSop",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -4,
          "typ": null,
          "max": 15,
          "conditions": "Static",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 63,
          "conditions": "VGS = 15 V, TC = 25˚C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 48,
          "conditions": "VGS = 15 V, TC = 100˚C",
          "source_page": 1,
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        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "ID(pulse)",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 120,
          "conditions": "Pulse width tP limited by Tjmax",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 283,
          "conditions": "TC = 25˚C, TJ = 175 ˚C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature",
          "symbol": "TJ, Tstg",
          "kind": "absolute_maximum",
          "unit": "˚C",
          "min": -40,
          "typ": null,
          "max": 175,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Solder Temperature",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "˚C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "1.6mm (0.063”) from case for 10s",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate - Source Voltage (safe operation, per Note 2)",
          "symbol": "",
          "kind": "recommended_operating",
          "unit": "V",
          "min": 0,
          "typ": null,
          "max": 15,
          "conditions": "MOSFET can also safely operate at 0/+15 V (Note 2)",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 1200,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 100 μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.8,
          "typ": 2.5,
          "max": 3.6,
          "conditions": "VDS = VGS, ID = 11.5 mA, Fig. 11",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": null,
          "max": null,
          "conditions": "VDS = VGS, ID = 11.5 mA, TJ = 175ºC",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": 1,
          "max": 50,
          "conditions": "VDS = 1200 V, VGS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": 10,
          "max": 250,
          "conditions": "VGS = 15 V, VDS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": 23,
          "typ": 32,
          "max": 43,
          "conditions": "VGS = 15 V, ID = 40 A, Fig. 4, 5, 6",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 57.6,
          "conditions": "VGS = 15 V, ID = 40 A, TJ = 175ºC",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 4.6,
          "conditions": "VGS = -4 V, ISD = 20 A, TJ = 25 °C, Fig. 8, 9, 10",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 4.2,
          "conditions": "VGS = -4 V, ISD = 20 A, TJ = 175 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 62,
          "conditions": "VGS = -4 V, TC = 25˚C, Note 1",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode pulse Current",
          "symbol": "IS, pulse",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 120,
          "conditions": "VGS = -4 V, pulse width tP limited by Tjmax, Note 1",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance from Junction to Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 0.45,
          "max": null,
          "conditions": "Fig. 21",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance From Junction to Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 40,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
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