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HSCT040W120G34AG

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshsct040w120g34agfactory-2.0.0extractor-text

Changed since verified HSCT040W120G34AG

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HSCT040W120G34AG · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-lsglb3vo/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hsct040w120g34ag.kicad_sym✓ hsct040w120g34ag.kicad_mod✓ hsct040w120g34ag.step
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Ray Publish 0.1.0 3a363be 17h ago

HSCT040W120G34AG

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HSCT040W120G34AG from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the SiC MOSFET, also connected to the TAB; the device is rated for VDSmax 1200 V at VGS = 0 V and ID = 100 μA.
2 Power Source passive Power source terminal carrying the main drain current path, separate from the driver source pin (pin 3).
3 Driver Source passive Separate source pin provided for the gate driver return, as stated by the optimized package with a separate driver source pin feature.
4 Gate input Gate terminal; the datasheet limits are VGSmax -8/+19 V dynamic (AC, f > 1 Hz, with -4/+19 V when using the body diode) and VGSop -4/+15 V static, with the MOSFET able to operate safely at 0/+15 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source Voltage VDSmax 1200 V VGS = 0 V, ID = 100 μA 1
Gate - Source Voltage (dynamic) VGSmax -8 19 V AC (f >1 Hz) Note 1 1
Gate - Source Voltage (static) VGSop -4 15 V Static 1
Continuous Drain Current ID 63 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 48 A VGS = 15 V, TC = 100˚C 1
Pulsed Drain Current ID(pulse) 120 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 283 W TC = 25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Gate - Source Voltage (safe operation, per Note 2) 0 15 V MOSFET can also safely operate at 0/+15 V (Note 2) 1
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 11.5 mA, Fig. 11 2
Gate Threshold Voltage VGS(th) 2 V VDS = VGS, ID = 11.5 mA, TJ = 175ºC 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 1200 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 23 32 43 mΩ VGS = 15 V, ID = 40 A, Fig. 4, 5, 6 2
Drain-Source On-State Resistance RDS(on) 57.6 mΩ VGS = 15 V, ID = 40 A, TJ = 175ºC 2
Diode Forward Voltage VSD 4.6 V VGS = -4 V, ISD = 20 A, TJ = 25 °C, Fig. 8, 9, 10 2
Diode Forward Voltage VSD 4.2 V VGS = -4 V, ISD = 20 A, TJ = 175 °C 2
Continuous Diode Forward Current IS 62 A VGS = -4 V, TC = 25˚C, Note 1 2
Diode pulse Current IS, pulse 120 A VGS = -4 V, pulse width tP limited by Tjmax, Note 1 2
Thermal Resistance from Junction to Case RθJC 0.45 °C/W Fig. 21 2
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 2

CAD (KiCad official)

  • Symbol: HSCT040W120G34AG
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hsct040w120g34ag-etched.step / hsct040w120g34ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsct040w120g34ag.step / hsct040w120g34ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (11 pp, sha256 37681af3685aa9ec, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF