component

HNVH4L040N120SC1

Public Made by Adom

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshnvh4l040n120sc1factory-2.0.0extractor-text

Changed since verified HNVH4L040N120SC1

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HNVH4L040N120SC1 · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-duduspze/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hnvh4l040n120sc1.kicad_sym✓ hnvh4l040n120sc1.kicad_mod✓ hnvh4l040n120sc1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 18h ago
viewers hnvh4l040n120sc1: symbol repaired (body fitted to the names) · Ray 7h ago
hnvh4l040n120sc1-etched.glb Publish 0.1.0 · Ray 18h ago
hnvh4l040n120sc1-etched.step hnvh4l040n120sc1: factory component page (tier=lcsc) · Ray 18h ago
hnvh4l040n120sc1-hero.glb hnvh4l040n120sc1: hero GLB from the etched model (keeps the MPN mark) · Ray 18h ago
hnvh4l040n120sc1-hero.overlay.json Publish 0.1.0 · Ray 18h ago
hnvh4l040n120sc1.glb Publish 0.1.0 · Ray 18h ago
hnvh4l040n120sc1.kicad_mod Publish 0.1.0 · Ray 18h ago
hnvh4l040n120sc1.kicad_sym hnvh4l040n120sc1: symbol repaired (body fitted to the names) · Ray 7h ago
hnvh4l040n120sc1.lbr hnvh4l040n120sc1: symbol repaired (body fitted to the names) · Ray 7h ago
hnvh4l040n120sc1.step Publish 0.1.0 · Ray 18h ago
package.json Publish 0.1.0 · Ray 18h ago
page.json Set visibility: public · Ray 18h ago
README.md Publish 0.1.0 · Ray 18h ago
verification.json Verified: Published by the parts factory: tier lcsc, 4 pins · Ray 18h ago

HNVH4L040N120SC1

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HNVH4L040N120SC1 from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, shown as Pin 1 and TAB on the datasheet; the device is rated VDS 1200 V (V(BR)DSS, VGS = 0 V, ID = 100 μA).
2 Power Source passive Power source terminal carrying the main drain current; continuous ID is 78 A at VGS = 15 V, TC = 25 ˚C, and 57 A at TC = 100 ˚C.
3 Driver Source passive Separate driver source terminal, provided so the gate drive return is kept apart from the power source pin per the datasheet's 'separate driver source pin' package feature.
4 Gate input Gate terminal; static VGS is limited to -5/+20 V and dynamic (AC, f > 1 Hz) VGS to -10/+25 V, per the Maximum Ratings table.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source Voltage VDSmax 1200 V VGS = 0 V, ID = 100 μA 1
Gate - Source Voltage (dynamic) VGSmax -10 25 V AC (f >1 Hz) 1
Gate - Source Voltage (static) VGSop -5 20 V Static 1
Continuous Drain Current ID 78 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 57 A VGS = 15 V, TC = 100˚C 1
Power Dissipation PD 405 W TC = 25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 2 2.5 4 V VDS = VGS, ID = 10 mA 2
Gate Threshold Voltage VGS(th) 1.5 V VDS = VGS, ID = 10 mA, TJ = 175ºC 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 1200 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 200 nA VGS = 20 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 40 50 mΩ VGS = 20 V, ID = 40 A 2
Drain-Source On-State Resistance RDS(on) 59 mΩ VGS = 20 V, ID = 40 A, TJ = 175ºC 2
Transconductance gfs 10.4 S VDS = 20 V, IDS = 40 A 2
Transconductance gfs 7.7 S VDS = 20 V, IDS = 40 A, TJ = 175ºC 2
Input Capacitance Ciss 2101 pF VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV 2
Output Capacitance Coss 161 pF VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV 2
Reverse Transfer Capacitance Crss 14 pF VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV 2
Coss Stored Energy Eoss 90 μJ 2
Turn-On Switching Energy (SiC Diode FWD) EON 1100 μJ VDS = 800 V, VGS = -5 V/+20 V, ID = 40A, RG(ext) = 2.5Ω, L = 100 μH, Tj = 175ºC 2
Turn Off Switching Energy (SiC Diode FWD) EOFF 900 μJ VDS = 800 V, VGS = -5 V/+20 V, ID = 40A, RG(ext) = 2.5Ω, L = 100 μH, Tj = 175ºC 2
Turn-On Delay Time td(on) 22 ns VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A 2
Rise Time tr 49 ns VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A 2
Turn-Off Delay Time td(off) 71 ns VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A 2
Fall Time tf 23 ns VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A 2
Internal Gate Resistance RG(int) 1.7 Ω f = 1 MHz, VAC = 25 mV 2
Gate to Source Charge Qgs 33 nC VDS = 800 V, VGS = -5 V/20 V, ID = 40 A 2
Gate to Drain Charge Qgd 51 nC VDS = 800 V, VGS = -5 V/20 V, ID = 40 A 2
Total Gate Charge Qg 131 nC VDS = 800 V, VGS = -5 V/20 V, ID = 40 A 2
Diode Forward Voltage VSD 4.1 V VGS = -5 V, ISD = 20 A, TJ = 25 °C 2
Diode Forward Voltage VSD 3.5 V VGS = -5 V, ISD = 20 A, TJ = 175 °C 2
Continuous Diode Forward Current IS 83 A VGS = -4 V, TC = 25˚C 2
Reverse Recover Time trr 56 ns VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C 2
Reverse Recovery Charge Qrr 508 nC VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C 2
Peak Reverse Recovery Current Irrm 18 A VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C 2
Thermal Resistance from Junction to Case RθJC 0.25 °C/W 2
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 2

CAD (KiCad official)

  • Symbol: HNVH4L040N120SC1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hnvh4l040n120sc1-etched.step / hnvh4l040n120sc1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hnvh4l040n120sc1.step / hnvh4l040n120sc1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 0ad1663438b5ae9a, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF