# HNVH4L040N120SC1

**HXY MOSFET** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HNVH4L040N120SC1 from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal, shown as Pin 1 and TAB on the datasheet; the device is rated VDS 1200 V (V(BR)DSS, VGS = 0 V, ID = 100 μA). |
| 2 | Power Source | passive | Power source terminal carrying the main drain current; continuous ID is 78 A at VGS = 15 V, TC = 25 ˚C, and 57 A at TC = 100 ˚C. |
| 3 | Driver Source | passive | Separate driver source terminal, provided so the gate drive return is kept apart from the power source pin per the datasheet's 'separate driver source pin' package feature. |
| 4 | Gate | input | Gate terminal; static VGS is limited to -5/+20 V and dynamic (AC, f > 1 Hz) VGS to -10/+25 V, per the Maximum Ratings table. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source Voltage | VDSmax |  |  | 1200 | V | VGS = 0 V, ID = 100 μA | 1 |
| Gate - Source Voltage (dynamic) | VGSmax | -10 |  | 25 | V | AC (f >1 Hz) | 1 |
| Gate - Source Voltage (static) | VGSop | -5 |  | 20 | V | Static | 1 |
| Continuous Drain Current | ID |  |  | 78 | A | VGS = 15 V, TC = 25˚C | 1 |
| Continuous Drain Current | ID |  |  | 57 | A | VGS = 15 V, TC = 100˚C | 1 |
| Power Dissipation | PD |  |  | 405 | W | TC = 25˚C, TJ = 175 ˚C | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -40 |  | 175 | ˚C |  | 1 |
| Solder Temperature | TL |  |  | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 |  |  | V | VGS = 0 V, ID = 100 μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.5 | 4 | V | VDS = VGS, ID = 10 mA | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 |  |  | V | VDS = VGS, ID = 10 mA, TJ = 175ºC | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 | 50 | μA | VDS = 1200 V, VGS = 0 V | 2 |
| Gate-Source Leakage Current | IGSS |  | 10 | 200 | nA | VGS = 20 V, VDS = 0 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 40 | 50 | mΩ | VGS = 20 V, ID = 40 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 59 |  | mΩ | VGS = 20 V, ID = 40 A, TJ = 175ºC | 2 |
| Transconductance | gfs |  | 10.4 |  | S | VDS = 20 V, IDS = 40 A | 2 |
| Transconductance | gfs |  | 7.7 |  | S | VDS = 20 V, IDS = 40 A, TJ = 175ºC | 2 |
| Input Capacitance | Ciss |  | 2101 |  | pF | VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV | 2 |
| Output Capacitance | Coss |  | 161 |  | pF | VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV | 2 |
| Reverse Transfer Capacitance | Crss |  | 14 |  | pF | VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV | 2 |
| Coss Stored Energy | Eoss |  | 90 |  | μJ |  | 2 |
| Turn-On Switching Energy (SiC Diode FWD) | EON |  | 1100 |  | μJ | VDS = 800 V, VGS = -5 V/+20 V, ID = 40A, RG(ext) = 2.5Ω, L = 100 μH, Tj = 175ºC | 2 |
| Turn Off Switching Energy (SiC Diode FWD) | EOFF |  | 900 |  | μJ | VDS = 800 V, VGS = -5 V/+20 V, ID = 40A, RG(ext) = 2.5Ω, L = 100 μH, Tj = 175ºC | 2 |
| Turn-On Delay Time | td(on) |  | 22 |  | ns | VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A | 2 |
| Rise Time | tr |  | 49 |  | ns | VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A | 2 |
| Turn-Off Delay Time | td(off) |  | 71 |  | ns | VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A | 2 |
| Fall Time | tf |  | 23 |  | ns | VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A | 2 |
| Internal Gate Resistance | RG(int) |  | 1.7 |  | Ω | f = 1 MHz, VAC = 25 mV | 2 |
| Gate to Source Charge | Qgs |  | 33 |  | nC | VDS = 800 V, VGS = -5 V/20 V, ID = 40 A | 2 |
| Gate to Drain Charge | Qgd |  | 51 |  | nC | VDS = 800 V, VGS = -5 V/20 V, ID = 40 A | 2 |
| Total Gate Charge | Qg |  | 131 |  | nC | VDS = 800 V, VGS = -5 V/20 V, ID = 40 A | 2 |
| Diode Forward Voltage | VSD |  |  | 4.1 | V | VGS = -5 V, ISD = 20 A, TJ = 25 °C | 2 |
| Diode Forward Voltage | VSD |  |  | 3.5 | V | VGS = -5 V, ISD = 20 A, TJ = 175 °C | 2 |
| Continuous Diode Forward Current | IS |  |  | 83 | A | VGS = -4 V, TC = 25˚C | 2 |
| Reverse Recover Time | trr |  | 56 |  | ns | VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C | 2 |
| Reverse Recovery Charge | Qrr |  | 508 |  | nC | VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C | 2 |
| Peak Reverse Recovery Current | Irrm |  | 18 |  | A | VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C | 2 |
| Thermal Resistance from Junction to Case | RθJC |  | 0.25 |  | °C/W |  | 2 |
| Thermal Resistance From Junction to Ambient | RθJA |  | 40 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `HNVH4L040N120SC1`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `hnvh4l040n120sc1-etched.step` / `hnvh4l040n120sc1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hnvh4l040n120sc1.step` / `hnvh4l040n120sc1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hnvh4l040n120sc1-datasheet.pdf) (9 pp, sha256 `0ad1663438b5ae9a`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hnvh4l040n120sc1-datasheet.pdf)