main
Ray Set visibility: public ce7d04b 19h ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "hnvh4l040n120sc1",
  "title": "HNVH4L040N120SC1",
  "brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "silicon carbide (sic) devices",
    "hnvh4l040n120sc1",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "HNVH4L040N120SC1",
    "manufacturer": "HXY MOSFET",
    "package": "TO-247-4L",
    "pin_count": 4,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/5ed4dd4ec241e96c79ba548b7d420b53.pdf",
    "parts": {
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      "model_3d_plain": "hnvh4l040n120sc1-etched.glb",
      "model_3d_step": "hnvh4l040n120sc1-etched.step",
      "model_3d_step_plain": "hnvh4l040n120sc1.step",
      "lbr": "hnvh4l040n120sc1.lbr"
    },
    "distributor_links": {
      "lcsc": "C42389123"
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    "distributor_check": {
      "checked_at": "2026-11-04T12:54:24Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal, shown as Pin 1 and TAB on the datasheet; the device is rated VDS 1200 V (V(BR)DSS, VGS = 0 V, ID = 100 μA)."
      },
      {
        "number": "2",
        "name": "Power Source",
        "type": "passive",
        "description": "Power source terminal carrying the main drain current; continuous ID is 78 A at VGS = 15 V, TC = 25 ˚C, and 57 A at TC = 100 ˚C."
      },
      {
        "number": "3",
        "name": "Driver Source",
        "type": "passive",
        "description": "Separate driver source terminal, provided so the gate drive return is kept apart from the power source pin per the datasheet's 'separate driver source pin' package feature."
      },
      {
        "number": "4",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal; static VGS is limited to -5/+20 V and dynamic (AC, f > 1 Hz) VGS to -10/+25 V, per the Maximum Ratings table."
      }
    ],
    "provenance": {
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        "at": "2026-11-04T12:54:16"
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        "pages": 9,
        "sha256": "0ad1663438b5ae9a",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "centre_offset_mm": 0.414,
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        "sha256": "976ae560ee073c7450ef39d3d2fc3006e5eed9c51132093905f3e98066a0fc8d",
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  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "TO-247-4L",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "4"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "0ad1663438b5ae9a720adfc037059499d459d971481c5ebd210868b26bc655d7",
      "rows": [
        {
          "name": "Drain - Source Voltage",
          "symbol": "VDSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1200,
          "conditions": "VGS = 0 V, ID = 100 μA",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate - Source Voltage (dynamic)",
          "symbol": "VGSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -10,
          "typ": null,
          "max": 25,
          "conditions": "AC (f >1 Hz)",
          "source_page": 1,
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        },
        {
          "name": "Gate - Source Voltage (static)",
          "symbol": "VGSop",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -5,
          "typ": null,
          "max": 20,
          "conditions": "Static",
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          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 78,
          "conditions": "VGS = 15 V, TC = 25˚C",
          "source_page": 1,
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        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
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          "unit": "A",
          "min": null,
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          "max": 57,
          "conditions": "VGS = 15 V, TC = 100˚C",
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        },
        {
          "name": "Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 405,
          "conditions": "TC = 25˚C, TJ = 175 ˚C",
          "source_page": 1,
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        {
          "name": "Operating Junction and Storage Temperature",
          "symbol": "TJ, Tstg",
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          "unit": "˚C",
          "min": -40,
          "typ": null,
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          "conditions": "",
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        {
          "name": "Solder Temperature",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "˚C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "1.6mm (0.063”) from case for 10s",
          "source_page": 1,
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        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 1200,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 100 μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": 2.5,
          "max": 4,
          "conditions": "VDS = VGS, ID = 10 mA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.5,
          "typ": null,
          "max": null,
          "conditions": "VDS = VGS, ID = 10 mA, TJ = 175ºC",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": 1,
          "max": 50,
          "conditions": "VDS = 1200 V, VGS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": 10,
          "max": 200,
          "conditions": "VGS = 20 V, VDS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 40,
          "max": 50,
          "conditions": "VGS = 20 V, ID = 40 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 59,
          "max": null,
          "conditions": "VGS = 20 V, ID = 40 A, TJ = 175ºC",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Transconductance",
          "symbol": "gfs",
          "kind": "electrical",
          "unit": "S",
          "min": null,
          "typ": 10.4,
          "max": null,
          "conditions": "VDS = 20 V, IDS = 40 A",
          "source_page": 2,
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        {
          "name": "Transconductance",
          "symbol": "gfs",
          "kind": "electrical",
          "unit": "S",
          "min": null,
          "typ": 7.7,
          "max": null,
          "conditions": "VDS = 20 V, IDS = 40 A, TJ = 175ºC",
          "source_page": 2,
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        },
        {
          "name": "Input Capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 2101,
          "max": null,
          "conditions": "VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Output Capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 161,
          "max": null,
          "conditions": "VGS = 0 V, VDS = 1000 V, f = 100kHz, VAC = 25 mV",
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        {
          "name": "Reverse Transfer Capacitance",
          "symbol": "Crss",
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          "min": null,
          "typ": 14,
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        {
          "name": "Coss Stored Energy",
          "symbol": "Eoss",
          "kind": "electrical",
          "unit": "μJ",
          "min": null,
          "typ": 90,
          "max": null,
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        {
          "name": "Turn-On Switching Energy (SiC Diode FWD)",
          "symbol": "EON",
          "kind": "electrical",
          "unit": "μJ",
          "min": null,
          "typ": 1100,
          "max": null,
          "conditions": "VDS = 800 V, VGS = -5 V/+20 V, ID = 40A, RG(ext) = 2.5Ω, L = 100 μH, Tj = 175ºC",
          "source_page": 2,
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        {
          "name": "Turn Off Switching Energy (SiC Diode FWD)",
          "symbol": "EOFF",
          "kind": "electrical",
          "unit": "μJ",
          "min": null,
          "typ": 900,
          "max": null,
          "conditions": "VDS = 800 V, VGS = -5 V/+20 V, ID = 40A, RG(ext) = 2.5Ω, L = 100 μH, Tj = 175ºC",
          "source_page": 2,
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        },
        {
          "name": "Turn-On Delay Time",
          "symbol": "td(on)",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 22,
          "max": null,
          "conditions": "VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Rise Time",
          "symbol": "tr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 49,
          "max": null,
          "conditions": "VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A",
          "source_page": 2,
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        },
        {
          "name": "Turn-Off Delay Time",
          "symbol": "td(off)",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 71,
          "max": null,
          "conditions": "VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A",
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        {
          "name": "Fall Time",
          "symbol": "tf",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 23,
          "max": null,
          "conditions": "VDD = 800 V, VGS = -5 V/20 V, RG(ext) = 2.5 Ω, ID = 40 A",
          "source_page": 2,
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        {
          "name": "Internal Gate Resistance",
          "symbol": "RG(int)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.7,
          "max": null,
          "conditions": "f = 1 MHz, VAC = 25 mV",
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        {
          "name": "Gate to Source Charge",
          "symbol": "Qgs",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 33,
          "max": null,
          "conditions": "VDS = 800 V, VGS = -5 V/20 V, ID = 40 A",
          "source_page": 2,
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        },
        {
          "name": "Gate to Drain Charge",
          "symbol": "Qgd",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 51,
          "max": null,
          "conditions": "VDS = 800 V, VGS = -5 V/20 V, ID = 40 A",
          "source_page": 2,
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        },
        {
          "name": "Total Gate Charge",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 131,
          "max": null,
          "conditions": "VDS = 800 V, VGS = -5 V/20 V, ID = 40 A",
          "source_page": 2,
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        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
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        {
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          "min": null,
          "typ": null,
          "max": 3.5,
          "conditions": "VGS = -5 V, ISD = 20 A, TJ = 175 °C",
          "source_page": 2,
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          "name": "Continuous Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 83,
          "conditions": "VGS = -4 V, TC = 25˚C",
          "source_page": 2,
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          "name": "Reverse Recover Time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 56,
          "max": null,
          "conditions": "VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Reverse Recovery Charge",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 508,
          "max": null,
          "conditions": "VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak Reverse Recovery Current",
          "symbol": "Irrm",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": 18,
          "max": null,
          "conditions": "VGS = -5 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance from Junction to Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 0.25,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance From Junction to Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 40,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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