# HAIMZH120R030M1T

**HXY MOSFET** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HAIMZH120R030M1T from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal, also the metal TAB; the datasheet rates the device at BVDSS 1200 V (VGS=0V, ID=250uA) with continuous drain current of 117 A at TC=25°C and 84 A at TC=100°C. |
| 2 | Power Source | passive | Power source terminal for the main drain current path; the datasheet gives no separate voltage or current limit for this pin beyond the device ratings. |
| 3 | Driver Source | passive | Driver source terminal, shown separately from the power source on the pin diagram; the datasheet gives no separate limit for this pin. |
| 4 | Gate | input | Gate input with a static gate-source voltage rating of -4/+18 V and an absolute maximum dynamic gate-source voltage of -8/+22 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 1200 | V |  | 1 |
| Continuous drain current | ID |  |  | 117 | A | TC = 25°C | 1 |
| Continuous drain current | ID |  |  | 84 | A | TC = 100°C | 1 |
| Pulsed drain current | ID pulse |  |  | 250 | A | TC = 25°C, tp limited by Tjmax | 1 |
| Gate-Source voltage | VGS | -4 |  | 18 | V |  | 1 |
| Gate-Source voltage (dynamic, absolute maximum values) | VGSmax | -8 |  | 22 | V | dynamic, absolute maximum values | 1 |
| Power dissipation | Ptot |  |  | 556 | W | TC = 25°C | 1 |
| Operating junction and storage temperature | Tj, Tstg | -55 |  | 175 | °C |  | 1 |
| Thermal resistance, junction to case | RthJC |  |  | 0.27 | °C/W |  | 2 |
| Thermal resistance, junction to ambient | RthJA |  |  | 40 | °C/W |  | 2 |
| Drain-source breakdown voltage | BVDSS | 1200 |  |  | V | VGS=0V, ID=250uA | 2 |

## CAD (KiCad official)

- Symbol: `HAIMZH120R030M1T`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `haimzh120r030m1t-etched.step` / `haimzh120r030m1t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `haimzh120r030m1t.step` / `haimzh120r030m1t.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/haimzh120r030m1t-datasheet.pdf) (10 pp, sha256 `5caf9ca58ab08c7d`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/haimzh120r030m1t-datasheet.pdf)