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Contents

README

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HAIMZH120R030M1T

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HAIMZH120R030M1T from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, also the metal TAB; the datasheet rates the device at BVDSS 1200 V (VGS=0V, ID=250uA) with continuous drain current of 117 A at TC=25°C and 84 A at TC=100°C.
2 Power Source passive Power source terminal for the main drain current path; the datasheet gives no separate voltage or current limit for this pin beyond the device ratings.
3 Driver Source passive Driver source terminal, shown separately from the power source on the pin diagram; the datasheet gives no separate limit for this pin.
4 Gate input Gate input with a static gate-source voltage rating of -4/+18 V and an absolute maximum dynamic gate-source voltage of -8/+22 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 1200 V 1
Continuous drain current ID 117 A TC = 25°C 1
Continuous drain current ID 84 A TC = 100°C 1
Pulsed drain current ID pulse 250 A TC = 25°C, tp limited by Tjmax 1
Gate-Source voltage VGS -4 18 V 1
Gate-Source voltage (dynamic, absolute maximum values) VGSmax -8 22 V dynamic, absolute maximum values 1
Power dissipation Ptot 556 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction to case RthJC 0.27 °C/W 2
Thermal resistance, junction to ambient RthJA 40 °C/W 2
Drain-source breakdown voltage BVDSS 1200 V VGS=0V, ID=250uA 2

CAD (KiCad official)

  • Symbol: HAIMZH120R030M1T
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: haimzh120r030m1t-etched.step / haimzh120r030m1t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); haimzh120r030m1t.step / haimzh120r030m1t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (10 pp, sha256 5caf9ca58ab08c7d, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF