component

HAIMZH120R030M1T

Public Made by Adom

by adom

HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshaimzh120r030m1tfactory-2.0.0extractor-text

Changed since verified HAIMZH120R030M1T

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HAIMZH120R030M1T · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-uujsvr_i/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! haimzh120r030m1t.kicad_sym✓ haimzh120r030m1t.kicad_mod✓ haimzh120r030m1t.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16h ago
viewers haimzh120r030m1t: symbol repaired (body fitted to the names) · Ray 6h ago
haimzh120r030m1t-etched.glb Publish 0.1.0 · Ray 16h ago
haimzh120r030m1t-etched.step haimzh120r030m1t: factory component page (tier=lcsc) · Ray 16h ago
haimzh120r030m1t-hero.glb haimzh120r030m1t: hero GLB from the etched model (keeps the MPN mark) · Ray 16h ago
haimzh120r030m1t-hero.overlay.json Publish 0.1.0 · Ray 16h ago
haimzh120r030m1t.glb Publish 0.1.0 · Ray 16h ago
haimzh120r030m1t.kicad_mod Publish 0.1.0 · Ray 16h ago
haimzh120r030m1t.kicad_sym haimzh120r030m1t: symbol repaired (body fitted to the names) · Ray 6h ago
haimzh120r030m1t.lbr haimzh120r030m1t: symbol repaired (body fitted to the names) · Ray 6h ago
haimzh120r030m1t.step Publish 0.1.0 · Ray 16h ago
package.json Publish 0.1.0 · Ray 16h ago
page.json Set visibility: public · Ray 16h ago
README.md Publish 0.1.0 · Ray 16h ago
verification.json Verified: Published by the parts factory: tier lcsc, 4 pins · Ray 16h ago

HAIMZH120R030M1T

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HAIMZH120R030M1T from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, also the metal TAB; the datasheet rates the device at BVDSS 1200 V (VGS=0V, ID=250uA) with continuous drain current of 117 A at TC=25°C and 84 A at TC=100°C.
2 Power Source passive Power source terminal for the main drain current path; the datasheet gives no separate voltage or current limit for this pin beyond the device ratings.
3 Driver Source passive Driver source terminal, shown separately from the power source on the pin diagram; the datasheet gives no separate limit for this pin.
4 Gate input Gate input with a static gate-source voltage rating of -4/+18 V and an absolute maximum dynamic gate-source voltage of -8/+22 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 1200 V 1
Continuous drain current ID 117 A TC = 25°C 1
Continuous drain current ID 84 A TC = 100°C 1
Pulsed drain current ID pulse 250 A TC = 25°C, tp limited by Tjmax 1
Gate-Source voltage VGS -4 18 V 1
Gate-Source voltage (dynamic, absolute maximum values) VGSmax -8 22 V dynamic, absolute maximum values 1
Power dissipation Ptot 556 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction to case RthJC 0.27 °C/W 2
Thermal resistance, junction to ambient RthJA 40 °C/W 2
Drain-source breakdown voltage BVDSS 1200 V VGS=0V, ID=250uA 2

CAD (KiCad official)

  • Symbol: HAIMZH120R030M1T
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: haimzh120r030m1t-etched.step / haimzh120r030m1t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); haimzh120r030m1t.step / haimzh120r030m1t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (10 pp, sha256 5caf9ca58ab08c7d, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF