component
GC2M0040120D
Public Made by Adomby adom
SUPSiC Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GC2M0040120D
SUPSiC · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
GC2M0040120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal with recommended operational voltage VGS = -5 V to +20 V and absolute maximum VGS = -10 V to +25 V. |
| 2 | Drain | passive | Drain terminal rated for maximum continuous drain current of 55 A at TC = 25°C and drain-source breakdown voltage of 1200 V. |
| 3 | Source | passive | Source terminal serving as reference point for gate-source voltage measurement and return path for drain current through the MOSFET channel. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
GC2M0040120D - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
gc2m0040120d-etched.step/gc2m0040120d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc2m0040120d.step/gc2m0040120d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (4 pp, sha256
eb81896b9d0fd6c6, retrieved 2026-09-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GC2M0040120D
**SUPSiC** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
GC2M0040120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal with recommended operational voltage VGS = -5 V to +20 V and absolute maximum VGS = -10 V to +25 V. |
| 2 | Drain | passive | Drain terminal rated for maximum continuous drain current of 55 A at TC = 25°C and drain-source breakdown voltage of 1200 V. |
| 3 | Source | passive | Source terminal serving as reference point for gate-source voltage measurement and return path for drain current through the MOSFET channel. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `GC2M0040120D`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `gc2m0040120d-etched.step` / `gc2m0040120d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gc2m0040120d.step` / `gc2m0040120d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SUPSiC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603122350380494848) (4 pp, sha256 `eb81896b9d0fd6c6`, retrieved 2026-09-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gc2m0040120d-datasheet.pdf)