# GBU808

**MDD（Microdiode Electronics）** · Bridge Rectifiers · GBU

GBU808 from MDD（Microdiode Electronics）, in a GBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | passive | Positive DC output terminal of the bridge; the GBU808 is rated 8.0 A average forward current (I(AV)) and 800 V VRRM. |
| 2 | 2 | passive | AC input terminal; the GBU808 is rated for 560 V maximum RMS voltage (VRMS). |
| 3 | 3 | passive | AC input terminal; the GBU808 is rated for 560 V maximum RMS voltage (VRMS). |
| 4 | - | passive | Negative DC output terminal of the bridge; the GBU808 is rated 8.0 A average forward current (I(AV)) and 800 V VDC blocking voltage. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | GBU |
| Category | Diodes |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage (GBU808) | VRRM |  |  | 800 | V |  | 1 |
| Maximum RMS voltage (GBU808) | VRMS |  |  | 560 | V |  | 1 |
| Maximum DC blocking voltage (GBU808) | VDC |  |  | 800 | V |  | 1 |
| Maximum average forward rectified current | I(AV) |  |  | 8 | A | Tc=100°C (without heatsink) | 1 |
| Peak forward surge current | IFSM |  |  | 175 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 |
| Maximum forward voltage | VF |  |  | 1.1 | V | at 4.0A DC | 1 |
| Maximum DC reverse current | IR |  |  | 10 | μA | TA=25°C, at rated DC blocking voltage | 1 |
| Maximum DC reverse current | IR |  |  | 0.5 | mA | TA=125°C, at rated DC blocking voltage | 1 |
| Typical junction capacitance | CJ |  | 60 |  | pF | Measured at 1.0MHz, applied reverse voltage 4.0V DC (Note 1) | 1 |
| Typical thermal resistance, junction to ambient | RθJA |  | 2.2 |  | °C/W | Device mounted on 75mm*75mm*1.6mm Cu plate heatsink (Note 2) | 1 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage temperature range | TSTG | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `GBU808`
- Footprint: `Diode_THT:Diode_Bridge_Vishay_GBU`
- 3D model: GBU (KiCad packages3D, STEP)
- 3D model files: `gbu808-etched.step` / `gbu808-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gbu808.step` / `gbu808.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MDD（Microdiode Electronics） datasheet](docs/gbu808-datasheet.pdf) (3 pp, sha256 `180b29044288d80c`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/gbu808-datasheet.pdf)