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GBU808

Public Made by Adom

by adom

MDD（Microdiode Electronics） Bridge Rectifiers, GBU. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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gbu808-hero.glb gbu808: hero GLB from the etched model (keeps the MPN mark) · Ray 4h ago
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GBU808

MDD（Microdiode Electronics） · Bridge Rectifiers · GBU

GBU808 from MDD（Microdiode Electronics）, in a GBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 + passive Positive DC output terminal of the bridge; the GBU808 is rated 8.0 A average forward current (I(AV)) and 800 V VRRM.
2 2 passive AC input terminal; the GBU808 is rated for 560 V maximum RMS voltage (VRMS).
3 3 passive AC input terminal; the GBU808 is rated for 560 V maximum RMS voltage (VRMS).
4 - passive Negative DC output terminal of the bridge; the GBU808 is rated 8.0 A average forward current (I(AV)) and 800 V VDC blocking voltage.

Key specifications

Parameter Value
Manufacturer MDD（Microdiode Electronics）
Package GBU
Category Diodes
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum repetitive peak reverse voltage (GBU808) VRRM 800 V 1
Maximum RMS voltage (GBU808) VRMS 560 V 1
Maximum DC blocking voltage (GBU808) VDC 800 V 1
Maximum average forward rectified current I(AV) 8 A Tc=100°C (without heatsink) 1
Peak forward surge current IFSM 175 A 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) 1
Maximum forward voltage VF 1.1 V at 4.0A DC 1
Maximum DC reverse current IR 10 μA TA=25°C, at rated DC blocking voltage 1
Maximum DC reverse current IR 0.5 mA TA=125°C, at rated DC blocking voltage 1
Typical junction capacitance CJ 60 pF Measured at 1.0MHz, applied reverse voltage 4.0V DC (Note 1) 1
Typical thermal resistance, junction to ambient RθJA 2.2 °C/W Device mounted on 75mm75mm1.6mm Cu plate heatsink (Note 2) 1
Operating junction temperature range TJ -55 150 °C 1
Storage temperature range TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: GBU808
  • Footprint: Diode_THT:Diode_Bridge_Vishay_GBU
  • 3D model: GBU (KiCad packages3D, STEP)
  • 3D model files: gbu808-etched.step / gbu808-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gbu808.step / gbu808.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD（Microdiode Electronics） datasheet (3 pp, sha256 180b29044288d80c, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF