component

GBI1600TKBR

Public Made by Adom

by adom

GOSEMICON DC-DC Converters, TSOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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GBI1600TKBR

GOSEMICON · DC-DC Converters · TSOT-23-6L

GBI1600TKBR from GOSEMICON, in a TSOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BOOT input Bootstrap supply for the high-side MOSFET gate driver, which requires a 0.1uF or greater ceramic capacitor between BOOT and SW and a BOOT-to-SW voltage above 2.6V for full-duty operation.
2 GND power_in Power ground for the device, which should be tied to the system ground plane at a single point as the layout guideline recommends.
3 FB input Buck converter feedback sensing input, connected to a resistor divider from VOUT, which the device regulates to the internal 0.770V reference typically (750mV to 790mV).
4 EN input High-voltage enable input that can be floated to enable the device or tied to VIN for automatic start-up, with precision thresholds of 1.21V rising and 1.07V falling and a maximum voltage of 60V.
5 VIN power_in Power supply input for the regulator, which must be locally bypassed and operates over 4V to 60V.
6 SW output Switching node of the buck converter, rated -0.6V to 65V to GND (-4V to 65V for transients of 20ns or less).

Key specifications

Parameter Value
Manufacturer GOSEMICON
Package TSOT-23-6L
Category Power Management (PMIC)
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output voltage protection / ABS: VIN, EN to GND VIN, EN to GND -0.3 65 V 3
FB to GND FB to GND -0.3 6.5 V 3
SW to GND SW to GND -0.6 65 V 3
SW to GND (≤20ns transients) SW to GND -4 65 V ≤20ns transients 3
BOOT to SW BOOT to SW -0.3 6.5 V 3
Junction temperature TJ -40 150 °C 3
Storage temperature TSTG -65 150 °C 3
VIN Supply voltage range VIN 4 60 V 3
Output Current Io 0 1 A 3
EN pin voltage VEN 0 60 V 3
Switching frequency range fSW 510 690 kHz 3
Operating junction temperature TJ -40 125 °C 3
Operating input voltage VVIN 4 60 V 4
Input UVLO, VIN rising VIN_UVLO 3.75 3.9 V VIN rising 4
Shutdown current ISHDN 1 8 uA EN=0, No load, 4V≤VVIN≤60V 4
Quiescent current IQ 80 109 uA EN=floating, No load, No switch, 4V≤VVIN≤60V, BOOT-SW=5V 4
Enable high threshold VEN_H 1.18 1.21 1.24 V 4
Feedback Voltage VFB 750 770 790 mV 4
High side FET on-resistance RDSON_H 360 542 950 mΩ 4
Switching frequency fSW 510 600 690 KHz 4
Enable low threshold VEN_L 1.07 V 4
Input UVLO hysteresis VIN_UVLO hysteresis 220 mV 4
Minimum on-time tON_MIN 80 ns 4
Internal soft-start time tSS 5 ms 4
HSD peak current limit ILIM_HSD 1.5 A VVIN=12V 4
Thermal shutdown threshold TSD 160 °C 4
Thermal shutdown hysteresis TSD hysteresis 30 °C 4
Output over voltage protection rising VOVP_H 109 % 5
Output over voltage protection falling VOVP_L 105 % 5
Junction to ambient thermal resistance, TSOT23-6L RθJA 102 °C/W 4
Junction to case (top) thermal resistance, TSOT23-6L RθJC_top 37 °C/W 4

CAD (KiCad official)

  • Symbol: GBI1600TKBR
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: gbi1600tkbr-etched.step / gbi1600tkbr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gbi1600tkbr.step / gbi1600tkbr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOSEMICON datasheet (19 pp, sha256 3c48a9227ddae0ee, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF