component
GBI1600TKBR
Public Made by Adomby adom
GOSEMICON DC-DC Converters, TSOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GBI1600TKBR
GOSEMICON · DC-DC Converters · TSOT-23-6L
GBI1600TKBR from GOSEMICON, in a TSOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BOOT | input | Bootstrap supply for the high-side MOSFET gate driver, which requires a 0.1uF or greater ceramic capacitor between BOOT and SW and a BOOT-to-SW voltage above 2.6V for full-duty operation. |
| 2 | GND | power_in | Power ground for the device, which should be tied to the system ground plane at a single point as the layout guideline recommends. |
| 3 | FB | input | Buck converter feedback sensing input, connected to a resistor divider from VOUT, which the device regulates to the internal 0.770V reference typically (750mV to 790mV). |
| 4 | EN | input | High-voltage enable input that can be floated to enable the device or tied to VIN for automatic start-up, with precision thresholds of 1.21V rising and 1.07V falling and a maximum voltage of 60V. |
| 5 | VIN | power_in | Power supply input for the regulator, which must be locally bypassed and operates over 4V to 60V. |
| 6 | SW | output | Switching node of the buck converter, rated -0.6V to 65V to GND (-4V to 65V for transients of 20ns or less). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOSEMICON |
| Package | TSOT-23-6L |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Output voltage protection / ABS: VIN, EN to GND | VIN, EN to GND | -0.3 | 65 | V | 3 | ||
| FB to GND | FB to GND | -0.3 | 6.5 | V | 3 | ||
| SW to GND | SW to GND | -0.6 | 65 | V | 3 | ||
| SW to GND (≤20ns transients) | SW to GND | -4 | 65 | V | ≤20ns transients | 3 | |
| BOOT to SW | BOOT to SW | -0.3 | 6.5 | V | 3 | ||
| Junction temperature | TJ | -40 | 150 | °C | 3 | ||
| Storage temperature | TSTG | -65 | 150 | °C | 3 | ||
| VIN Supply voltage range | VIN | 4 | 60 | V | 3 | ||
| Output Current | Io | 0 | 1 | A | 3 | ||
| EN pin voltage | VEN | 0 | 60 | V | 3 | ||
| Switching frequency range | fSW | 510 | 690 | kHz | 3 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 3 | ||
| Operating input voltage | VVIN | 4 | 60 | V | 4 | ||
| Input UVLO, VIN rising | VIN_UVLO | 3.75 | 3.9 | V | VIN rising | 4 | |
| Shutdown current | ISHDN | 1 | 8 | uA | EN=0, No load, 4V≤VVIN≤60V | 4 | |
| Quiescent current | IQ | 80 | 109 | uA | EN=floating, No load, No switch, 4V≤VVIN≤60V, BOOT-SW=5V | 4 | |
| Enable high threshold | VEN_H | 1.18 | 1.21 | 1.24 | V | 4 | |
| Feedback Voltage | VFB | 750 | 770 | 790 | mV | 4 | |
| High side FET on-resistance | RDSON_H | 360 | 542 | 950 | mΩ | 4 | |
| Switching frequency | fSW | 510 | 600 | 690 | KHz | 4 | |
| Enable low threshold | VEN_L | 1.07 | V | 4 | |||
| Input UVLO hysteresis | VIN_UVLO hysteresis | 220 | mV | 4 | |||
| Minimum on-time | tON_MIN | 80 | ns | 4 | |||
| Internal soft-start time | tSS | 5 | ms | 4 | |||
| HSD peak current limit | ILIM_HSD | 1.5 | A | VVIN=12V | 4 | ||
| Thermal shutdown threshold | TSD | 160 | °C | 4 | |||
| Thermal shutdown hysteresis | TSD hysteresis | 30 | °C | 4 | |||
| Output over voltage protection rising | VOVP_H | 109 | % | 5 | |||
| Output over voltage protection falling | VOVP_L | 105 | % | 5 | |||
| Junction to ambient thermal resistance, TSOT23-6L | RθJA | 102 | °C/W | 4 | |||
| Junction to case (top) thermal resistance, TSOT23-6L | RθJC_top | 37 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
GBI1600TKBR - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
gbi1600tkbr-etched.step/gbi1600tkbr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gbi1600tkbr.step/gbi1600tkbr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOSEMICON datasheet (19 pp, sha256
3c48a9227ddae0ee, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GBI1600TKBR
**GOSEMICON** · DC-DC Converters · TSOT-23-6L
GBI1600TKBR from GOSEMICON, in a TSOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BOOT | input | Bootstrap supply for the high-side MOSFET gate driver, which requires a 0.1uF or greater ceramic capacitor between BOOT and SW and a BOOT-to-SW voltage above 2.6V for full-duty operation. |
| 2 | GND | power_in | Power ground for the device, which should be tied to the system ground plane at a single point as the layout guideline recommends. |
| 3 | FB | input | Buck converter feedback sensing input, connected to a resistor divider from VOUT, which the device regulates to the internal 0.770V reference typically (750mV to 790mV). |
| 4 | EN | input | High-voltage enable input that can be floated to enable the device or tied to VIN for automatic start-up, with precision thresholds of 1.21V rising and 1.07V falling and a maximum voltage of 60V. |
| 5 | VIN | power_in | Power supply input for the regulator, which must be locally bypassed and operates over 4V to 60V. |
| 6 | SW | output | Switching node of the buck converter, rated -0.6V to 65V to GND (-4V to 65V for transients of 20ns or less). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOSEMICON |
| Package | TSOT-23-6L |
| Category | Power Management (PMIC) |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Output voltage protection / ABS: VIN, EN to GND | VIN, EN to GND | -0.3 | | 65 | V | | 3 |
| FB to GND | FB to GND | -0.3 | | 6.5 | V | | 3 |
| SW to GND | SW to GND | -0.6 | | 65 | V | | 3 |
| SW to GND (≤20ns transients) | SW to GND | -4 | | 65 | V | ≤20ns transients | 3 |
| BOOT to SW | BOOT to SW | -0.3 | | 6.5 | V | | 3 |
| Junction temperature | TJ | -40 | | 150 | °C | | 3 |
| Storage temperature | TSTG | -65 | | 150 | °C | | 3 |
| VIN Supply voltage range | VIN | 4 | | 60 | V | | 3 |
| Output Current | Io | 0 | | 1 | A | | 3 |
| EN pin voltage | VEN | 0 | | 60 | V | | 3 |
| Switching frequency range | fSW | 510 | | 690 | kHz | | 3 |
| Operating junction temperature | TJ | -40 | | 125 | °C | | 3 |
| Operating input voltage | VVIN | 4 | | 60 | V | | 4 |
| Input UVLO, VIN rising | VIN_UVLO | 3.75 | 3.9 | | V | VIN rising | 4 |
| Shutdown current | ISHDN | | 1 | 8 | uA | EN=0, No load, 4V≤VVIN≤60V | 4 |
| Quiescent current | IQ | | 80 | 109 | uA | EN=floating, No load, No switch, 4V≤VVIN≤60V, BOOT-SW=5V | 4 |
| Enable high threshold | VEN_H | 1.18 | 1.21 | 1.24 | V | | 4 |
| Feedback Voltage | VFB | 750 | 770 | 790 | mV | | 4 |
| High side FET on-resistance | RDSON_H | 360 | 542 | 950 | mΩ | | 4 |
| Switching frequency | fSW | 510 | 600 | 690 | KHz | | 4 |
| Enable low threshold | VEN_L | | 1.07 | | V | | 4 |
| Input UVLO hysteresis | VIN_UVLO hysteresis | | 220 | | mV | | 4 |
| Minimum on-time | tON_MIN | | 80 | | ns | | 4 |
| Internal soft-start time | tSS | | 5 | | ms | | 4 |
| HSD peak current limit | ILIM_HSD | | 1.5 | | A | VVIN=12V | 4 |
| Thermal shutdown threshold | TSD | | 160 | | °C | | 4 |
| Thermal shutdown hysteresis | TSD hysteresis | | 30 | | °C | | 4 |
| Output over voltage protection rising | VOVP_H | | 109 | | % | | 5 |
| Output over voltage protection falling | VOVP_L | | 105 | | % | | 5 |
| Junction to ambient thermal resistance, TSOT23-6L | RθJA | | 102 | | °C/W | | 4 |
| Junction to case (top) thermal resistance, TSOT23-6L | RθJC_top | | 37 | | °C/W | | 4 |
## CAD (KiCad official)
- Symbol: `GBI1600TKBR`
- Footprint: `Package_TO_SOT_SMD:TSOT-23-6`
- 3D model: TSOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `gbi1600tkbr-etched.step` / `gbi1600tkbr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gbi1600tkbr.step` / `gbi1600tkbr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOSEMICON datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756313145864667136) (19 pp, sha256 `3c48a9227ddae0ee`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gbi1600tkbr-datasheet.pdf)