# FQP33N10

**onsemi** · MOSFETs · TO-220

FQP33N10 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; the gate-source voltage is rated at ±25 V (VGSS). |
| 2 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 100 V (VDSS) and the continuous drain current at 33 A at TC = 25°C. |
| 3 | S | passive | Source of the MOSFET; the maximum continuous body-diode forward current is rated at 33 A (IS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 100 | V |  | 2 |
| Drain Current - Continuous (TC = 25°C) | ID |  |  | 33 | A | TC = 25°C | 2 |
| Drain Current - Continuous (TC = 100°C) | ID |  |  | 23 | A | TC = 100°C | 2 |
| Drain Current - Pulsed | IDM |  |  | 132 | A | Note 1 | 2 |
| Gate-Source Voltage | VGSS | -25 |  | 25 | V |  | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 435 | mJ | Note 2 | 2 |
| Avalanche Current | IAR |  |  | 33 | A | Note 1 | 2 |
| Repetitive Avalanche Energy | EAR |  |  | 12.7 | mJ | Note 1 | 2 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 6 | V/ns | Note 3 | 2 |
| Power Dissipation | PD |  |  | 127 | W | TC = 25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 2 |
| Maximum Lead Temperature for Soldering | TL |  |  | 300 | °C | 1/8" from Case for 5 seconds | 2 |
| Thermal Resistance, Junction-to-Case, Max. | RθJC |  |  | 1.18 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient, Max. | RθJA |  |  | 62.5 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS = 0 V, ID = 250 μA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 100 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS = 80 V, TC = 150°C | 3 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS = 25 V, VDS = 0 V | 3 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS = -25 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 0.04 | 0.052 | Ω | VGS = 10 V, ID = 16.5 A | 3 |
| Input Capacitance | Ciss |  | 1150 | 1500 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss |  | 320 | 420 | pF |  | 3 |
| Reverse Transfer Capacitance | Crss |  | 62 | 80 | pF |  | 3 |
| Turn-On Delay Time | td(on) |  | 15 | 40 | ns | VDD = 50 V, ID = 33 A, RG = 25 Ω | 3 |
| Turn-On Rise Time | tr |  | 195 | 400 | ns |  | 3 |
| Turn-Off Delay Time | td(off) |  | 80 | 170 | ns |  | 3 |
| Turn-Off Fall Time | tf |  | 110 | 230 | ns |  | 3 |
| Total Gate Charge | Qg |  | 38 | 51 | nC | VDS = 80 V, ID = 33 A, VGS = 10 V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 33 | A |  | 3 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 132 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.5 | V | VGS = 0 V, IS = 33 A | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.11 |  | V/°C | ID = 250 μA, Referenced to 25°C | 3 |
| Forward Transconductance | gFS |  | 22 |  | S | VDS = 40 V, ID = 16.5 A | 3 |
| Gate-Source Charge | Qgs |  | 7.5 |  | nC |  | 3 |
| Gate-Drain Charge | Qgd |  | 18 |  | nC |  | 3 |
| Reverse Recovery Time | trr |  | 80 |  | ns | VGS = 0 V, IS = 33 A, dIF / dt = 100 A/μs | 3 |
| Reverse Recovery Charge | Qrr |  | 0.22 |  | μC |  | 3 |

## CAD (KiCad official)

- Symbol: `FQP33N10`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `fqp33n10-etched.step` / `fqp33n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqp33n10.step` / `fqp33n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897041359777792) (10 pp, sha256 `e2e7ebd5751dca3b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fqp33n10-datasheet.pdf)