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FQP33N10

Public Made by Adom

by adom

onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQP33N10

onsemi · MOSFETs · TO-220

FQP33N10 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; the gate-source voltage is rated at ±25 V (VGSS).
2 D passive Drain of the MOSFET; the drain-source voltage is rated at 100 V (VDSS) and the continuous drain current at 33 A at TC = 25°C.
3 S passive Source of the MOSFET; the maximum continuous body-diode forward current is rated at 33 A (IS).

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Drain Current - Continuous (TC = 25°C) ID 33 A TC = 25°C 2
Drain Current - Continuous (TC = 100°C) ID 23 A TC = 100°C 2
Drain Current - Pulsed IDM 132 A Note 1 2
Gate-Source Voltage VGSS -25 25 V 2
Single Pulsed Avalanche Energy EAS 435 mJ Note 2 2
Avalanche Current IAR 33 A Note 1 2
Repetitive Avalanche Energy EAR 12.7 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt 6 V/ns Note 3 2
Power Dissipation PD 127 W TC = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 175 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/8" from Case for 5 seconds 2
Thermal Resistance, Junction-to-Case, Max. RθJC 1.18 °C/W 2
Thermal Resistance, Junction-to-Ambient, Max. RθJA 62.5 °C/W 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0 V, ID = 250 μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 80 V, TC = 150°C 3
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 25 V, VDS = 0 V 3
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -25 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 3
Static Drain-Source On-Resistance RDS(on) 0.04 0.052 Ω VGS = 10 V, ID = 16.5 A 3
Input Capacitance Ciss 1150 1500 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 320 420 pF 3
Reverse Transfer Capacitance Crss 62 80 pF 3
Turn-On Delay Time td(on) 15 40 ns VDD = 50 V, ID = 33 A, RG = 25 Ω 3
Turn-On Rise Time tr 195 400 ns 3
Turn-Off Delay Time td(off) 80 170 ns 3
Turn-Off Fall Time tf 110 230 ns 3
Total Gate Charge Qg 38 51 nC VDS = 80 V, ID = 33 A, VGS = 10 V 3
Maximum Continuous Drain-Source Diode Forward Current IS 33 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 132 A 3
Drain-Source Diode Forward Voltage VSD 1.5 V VGS = 0 V, IS = 33 A 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.11 V/°C ID = 250 μA, Referenced to 25°C 3
Forward Transconductance gFS 22 S VDS = 40 V, ID = 16.5 A 3
Gate-Source Charge Qgs 7.5 nC 3
Gate-Drain Charge Qgd 18 nC 3
Reverse Recovery Time trr 80 ns VGS = 0 V, IS = 33 A, dIF / dt = 100 A/μs 3
Reverse Recovery Charge Qrr 0.22 μC 3

CAD (KiCad official)

  • Symbol: FQP33N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fqp33n10-etched.step / fqp33n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqp33n10.step / fqp33n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 e2e7ebd5751dca3b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF