component
FQP33N10
Public Made by Adomby adom
onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFQP33N10
onsemi · MOSFETs · TO-220
FQP33N10 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; the gate-source voltage is rated at ±25 V (VGSS). |
| 2 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 100 V (VDSS) and the continuous drain current at 33 A at TC = 25°C. |
| 3 | S | passive | Source of the MOSFET; the maximum continuous body-diode forward current is rated at 33 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | 2 | |||
| Drain Current - Continuous (TC = 25°C) | ID | 33 | A | TC = 25°C | 2 | ||
| Drain Current - Continuous (TC = 100°C) | ID | 23 | A | TC = 100°C | 2 | ||
| Drain Current - Pulsed | IDM | 132 | A | Note 1 | 2 | ||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 435 | mJ | Note 2 | 2 | ||
| Avalanche Current | IAR | 33 | A | Note 1 | 2 | ||
| Repetitive Avalanche Energy | EAR | 12.7 | mJ | Note 1 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 6 | V/ns | Note 3 | 2 | ||
| Power Dissipation | PD | 127 | W | TC = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8" from Case for 5 seconds | 2 | ||
| Thermal Resistance, Junction-to-Case, Max. | RθJC | 1.18 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient, Max. | RθJA | 62.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0 V, ID = 250 μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 80 V, TC = 150°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 25 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -25 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.04 | 0.052 | Ω | VGS = 10 V, ID = 16.5 A | 3 | |
| Input Capacitance | Ciss | 1150 | 1500 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Output Capacitance | Coss | 320 | 420 | pF | 3 | ||
| Reverse Transfer Capacitance | Crss | 62 | 80 | pF | 3 | ||
| Turn-On Delay Time | td(on) | 15 | 40 | ns | VDD = 50 V, ID = 33 A, RG = 25 Ω | 3 | |
| Turn-On Rise Time | tr | 195 | 400 | ns | 3 | ||
| Turn-Off Delay Time | td(off) | 80 | 170 | ns | 3 | ||
| Turn-Off Fall Time | tf | 110 | 230 | ns | 3 | ||
| Total Gate Charge | Qg | 38 | 51 | nC | VDS = 80 V, ID = 33 A, VGS = 10 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 33 | A | 3 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 132 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | VGS = 0 V, IS = 33 A | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.11 | V/°C | ID = 250 μA, Referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 22 | S | VDS = 40 V, ID = 16.5 A | 3 | ||
| Gate-Source Charge | Qgs | 7.5 | nC | 3 | |||
| Gate-Drain Charge | Qgd | 18 | nC | 3 | |||
| Reverse Recovery Time | trr | 80 | ns | VGS = 0 V, IS = 33 A, dIF / dt = 100 A/μs | 3 | ||
| Reverse Recovery Charge | Qrr | 0.22 | μC | 3 |
CAD (KiCad official)
- Symbol:
FQP33N10 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fqp33n10-etched.step/fqp33n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqp33n10.step/fqp33n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
e2e7ebd5751dca3b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).