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Ray fh4812: specified limits as data (metadata.characteristics, 17 rows from the datasheet) 3eec8fc 23d ago

FH4812

XIN FEI HONG · MOSFETs · SO-8

FH4812 from XIN FEI HONG, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (N-channel, VDS = 30V, ID = 10A).
2 G2 input Gate of MOSFET 2, with VGS rated ±20V and a threshold of 1 to 2V.
3 S1 passive Source of MOSFET 1 (N-channel, VDS = 30V, ID = 10A).
4 G1 input Gate of MOSFET 1, with VGS rated ±20V and a threshold of 1 to 2V.
5 D1 passive Drain of MOSFET 1, rated 30V VDS and 10A continuous at TA=25°C.
6 D1 passive Drain of MOSFET 1, rated 30V VDS and 10A continuous at TA=25°C.
7 D2 passive Drain of MOSFET 2, rated 30V VDS and 10A continuous at TA=25°C.
8 D2 passive Drain of MOSFET 2, rated 30V VDS and 10A continuous at TA=25°C.

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V Printed as '+ 20' 1
Drain Current, VGS @ 10V ID@TA=25℃ 10 A VGS @ 10V, TA=25℃ (note 3) 1
Pulsed Drain Current IDM 40 A Pulse width limited by max. junction temperature (note 1) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W Surface mounted on 1 in2 copper pad of FR4, t<10sec (note 3) 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 11.5 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 18 mΩ VGS=4.5V, ID=5A 2
Gate Threshold Voltage VGS(th) 1 2 V VDS=VGS, ID=1mA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 14 22.4 nC ID=5A 2
Input Capacitance Ciss 790 1280 pF VGS=0V 2
Gate Resistance Rg 2.5 5 Ω f=1.0MHz 2
Forward On Voltage VSD 1.2 V IS=1.7A, VGS=0V 2

CAD (KiCad official)

  • Symbol: FH4812
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fh4812-etched.step / fh4812-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh4812.step / fh4812.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (5 pp, sha256 7ed2d6cf25f1c57e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF