component
FH4812
Public Made by Adomby adom
XIN FEI HONG MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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fh4812: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -26,6 +26,30 @@ FH4812 from XIN FEI HONG, in a SO-8. Pinout and pin descriptions extracted from | Category | Triode/MOS Tube/Transistor | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-Source Voltage | VGS | | | 20 | V | Printed as '+ 20' | 1 |+| Drain Current, VGS @ 10V | ID@TA=25℃ | | | 10 | A | VGS @ 10V, TA=25℃ (note 3) | 1 |+| Pulsed Drain Current | IDM | | | 40 | A | Pulse width limited by max. junction temperature (note 1) | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |+| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |+| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 62.5 | ℃/W | Surface mounted on 1 in2 copper pad of FR4, t<10sec (note 3) | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | | 11.5 | mΩ | VGS=10V, ID=10A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | | 18 | mΩ | VGS=4.5V, ID=5A | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | | 2 | V | VDS=VGS, ID=1mA | 2 |+| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V | 2 |+| Gate-Source Leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |+| Total Gate Charge | Qg | | 14 | 22.4 | nC | ID=5A | 2 |+| Input Capacitance | Ciss | | 790 | 1280 | pF | VGS=0V | 2 |+| Gate Resistance | Rg | | 2.5 | 5 | Ω | f=1.0MHz | 2 |+| Forward On Voltage | VSD | | | 1.2 | V | IS=1.7A, VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `FH4812`
page.json+212−1@@ -179,6 +179,217 @@ "Package": "SO-8", "Category": "Triode/MOS Tube/Transistor", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "7ed2d6cf25f1c57e",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Printed as '+ 20'",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current, VGS @ 10V",+ "symbol": "ID@TA=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS @ 10V, TA=25℃ (note 3)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "Pulse width limited by max. junction temperature (note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Thermal Resistance, Junction-ambient",+ "symbol": "Rthj-a",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "Surface mounted on 1 in2 copper pad of FR4, t<10sec (note 3)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 11.5,+ "conditions": "VGS=10V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 18,+ "conditions": "VGS=4.5V, ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2,+ "conditions": "VDS=VGS, ID=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=24V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=+20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 14,+ "max": 22.4,+ "conditions": "ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 790,+ "max": 1280,+ "conditions": "VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.5,+ "max": 5,+ "conditions": "f=1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward On Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IS=1.7A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +431,4 @@ "visibility": { "public": true }-}+}