component
FH4812
Public Made by Adomby adom
XIN FEI HONG MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFH4812
XIN FEI HONG · MOSFETs · SO-8
FH4812 from XIN FEI HONG, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel, VDS = 30V, ID = 10A). |
| 2 | G2 | input | Gate of MOSFET 2, with VGS rated ±20V and a threshold of 1 to 2V. |
| 3 | S1 | passive | Source of MOSFET 1 (N-channel, VDS = 30V, ID = 10A). |
| 4 | G1 | input | Gate of MOSFET 1, with VGS rated ±20V and a threshold of 1 to 2V. |
| 5 | D1 | passive | Drain of MOSFET 1, rated 30V VDS and 10A continuous at TA=25°C. |
| 6 | D1 | passive | Drain of MOSFET 1, rated 30V VDS and 10A continuous at TA=25°C. |
| 7 | D2 | passive | Drain of MOSFET 2, rated 30V VDS and 10A continuous at TA=25°C. |
| 8 | D2 | passive | Drain of MOSFET 2, rated 30V VDS and 10A continuous at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | Printed as '+ 20' | 1 | ||
| Drain Current, VGS @ 10V | ID@TA=25℃ | 10 | A | VGS @ 10V, TA=25℃ (note 3) | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | Pulse width limited by max. junction temperature (note 1) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | Surface mounted on 1 in2 copper pad of FR4, t<10sec (note 3) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 11.5 | mΩ | VGS=10V, ID=10A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | mΩ | VGS=4.5V, ID=5A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS=VGS, ID=1mA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 14 | 22.4 | nC | ID=5A | 2 | |
| Input Capacitance | Ciss | 790 | 1280 | pF | VGS=0V | 2 | |
| Gate Resistance | Rg | 2.5 | 5 | Ω | f=1.0MHz | 2 | |
| Forward On Voltage | VSD | 1.2 | V | IS=1.7A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
FH4812 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fh4812-etched.step/fh4812-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh4812.step/fh4812.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (5 pp, sha256
7ed2d6cf25f1c57e, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).