# FGL60N100BNTDTU

**onsemi** · IGBT Transistors / Modules · TO-264-3

FGL60N100BNTDTU from onsemi, in a TO-264-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; Gate-to-Emitter voltage rated to 25 V maximum with threshold voltage of 5.0 V typical. |
| 2 | Collector | passive | Collector main power terminal; rated for 1000 V collector-emitter voltage with 60 A continuous collector current at 25°C case temperature. |
| 3 | Emitter | passive | Emitter main power terminal and gate return; includes built-in fast recovery diode with forward current rating of 15 A at 100°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-264-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Emitter Breakdown Voltage | BVCES | 1000 |  |  | V | VGE = 0 V, IC = 1 mA | 3 |
| Collector Cut-Off Current | ICES |  |  | 1 | mA | VCE = VCES, VGE = 0 V | 3 |
| G-E Leakage Current | IGES | -500 |  | 500 | nA | VGE = VGES, VCE = 0 V | 3 |
| G-E Threshold Voltage | VGE(th) | 4 | 5 | 7 | V | IC = 60 mA, VCE = VGE | 3 |
| Collector to Emitter Saturation Voltage | VCE(sat) |  | 1.5 | 1.8 | V | IC = 10 A, VGE = 15 V | 3 |
| Collector to Emitter Saturation Voltage | VCE(sat) |  | 2.5 | 2.9 | V | IC = 60 A, VGE = 15 V | 3 |
| Diode Forward Voltage | VFM |  | 1.2 | 1.7 | V | IF = 15 A | 3 |
| Diode Forward Voltage | VFM |  | 1.8 | 2.1 | V | IF = 60 A | 3 |
| Diode Reverse Recovery Time | trr |  | 1.2 | 1.5 | us | IF = 60 A, di/dt = 20 A/us | 3 |
| Instantaneous Reverse Current | IR |  | 0.05 | 2 | uA | VRRM = 1000 V | 3 |
| Collector to Emitter Voltage | VCES |  |  | 1000 | V |  | 2 |
| Gate to Emitter Voltage | VGES |  |  | 25 | V |  | 2 |
| Collector Current | IC |  |  | 60 | A | TC = 25oC | 2 |
| Collector Current | IC |  |  | 42 | A | TC = 100oC | 2 |
| Pulsed Collector Current | ICM |  |  | 200 | A | TC = 25oC | 2 |
| Diode Continuous Forward Current | IF |  |  | 15 | A | TC = 100oC | 2 |
| Maximum Power Dissipation | PD |  |  | 180 | W | TC = 25oC | 2 |
| Maximum Power Dissipation | PD |  |  | 72 | W | TC = 100oC | 2 |
| Operating Junction Temperature | TJ | -55 |  | 150 | oC |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | oC |  | 2 |
| Maximum Lead Temp. for Soldering | TL |  |  | 300 | oC | 1/8 in from case for 5 seconds | 2 |
| Thermal Resistance, Junction to Case (IGBT) | RJC(IGBT) |  |  | 0.69 | oC/W |  | 2 |
| Thermal Resistance, Junction to Case (Diode) | RJC(Diode) |  |  | 2.08 | oC/W |  | 2 |
| Thermal Resistance, Junction to Ambient | RJA |  |  | 25 | oC/W |  | 2 |

## CAD (KiCad official)

- Symbol: `FGL60N100BNTDTU`
- Footprint: `Package_TO_SOT_THT:TO-264-3_Vertical`
- 3D model: TO-264-3 (KiCad packages3D, STEP)
- 3D model files: `fgl60n100bntdtu-etched.step` / `fgl60n100bntdtu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fgl60n100bntdtu.step` / `fgl60n100bntdtu.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887377330769920) (9 pp, sha256 `f359f1e46617083b`, retrieved 2026-09-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fgl60n100bntdtu-datasheet.pdf)