component
FGL60N100BNTDTU
Public Made by Adomby adom
onsemi IGBT Transistors / Modules, TO-264-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFGL60N100BNTDTU
onsemi · IGBT Transistors / Modules · TO-264-3
FGL60N100BNTDTU from onsemi, in a TO-264-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; Gate-to-Emitter voltage rated to 25 V maximum with threshold voltage of 5.0 V typical. |
| 2 | Collector | passive | Collector main power terminal; rated for 1000 V collector-emitter voltage with 60 A continuous collector current at 25°C case temperature. |
| 3 | Emitter | passive | Emitter main power terminal and gate return; includes built-in fast recovery diode with forward current rating of 15 A at 100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-264-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Emitter Breakdown Voltage | BVCES | 1000 | V | VGE = 0 V, IC = 1 mA | 3 | ||
| Collector Cut-Off Current | ICES | 1 | mA | VCE = VCES, VGE = 0 V | 3 | ||
| G-E Leakage Current | IGES | -500 | 500 | nA | VGE = VGES, VCE = 0 V | 3 | |
| G-E Threshold Voltage | VGE(th) | 4 | 5 | 7 | V | IC = 60 mA, VCE = VGE | 3 |
| Collector to Emitter Saturation Voltage | VCE(sat) | 1.5 | 1.8 | V | IC = 10 A, VGE = 15 V | 3 | |
| Collector to Emitter Saturation Voltage | VCE(sat) | 2.5 | 2.9 | V | IC = 60 A, VGE = 15 V | 3 | |
| Diode Forward Voltage | VFM | 1.2 | 1.7 | V | IF = 15 A | 3 | |
| Diode Forward Voltage | VFM | 1.8 | 2.1 | V | IF = 60 A | 3 | |
| Diode Reverse Recovery Time | trr | 1.2 | 1.5 | us | IF = 60 A, di/dt = 20 A/us | 3 | |
| Instantaneous Reverse Current | IR | 0.05 | 2 | uA | VRRM = 1000 V | 3 | |
| Collector to Emitter Voltage | VCES | 1000 | V | 2 | |||
| Gate to Emitter Voltage | VGES | 25 | V | 2 | |||
| Collector Current | IC | 60 | A | TC = 25oC | 2 | ||
| Collector Current | IC | 42 | A | TC = 100oC | 2 | ||
| Pulsed Collector Current | ICM | 200 | A | TC = 25oC | 2 | ||
| Diode Continuous Forward Current | IF | 15 | A | TC = 100oC | 2 | ||
| Maximum Power Dissipation | PD | 180 | W | TC = 25oC | 2 | ||
| Maximum Power Dissipation | PD | 72 | W | TC = 100oC | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | oC | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | oC | 2 | ||
| Maximum Lead Temp. for Soldering | TL | 300 | oC | 1/8 in from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction to Case (IGBT) | RJC(IGBT) | 0.69 | oC/W | 2 | |||
| Thermal Resistance, Junction to Case (Diode) | RJC(Diode) | 2.08 | oC/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RJA | 25 | oC/W | 2 |
CAD (KiCad official)
- Symbol:
FGL60N100BNTDTU - Footprint:
Package_TO_SOT_THT:TO-264-3_Vertical - 3D model: TO-264-3 (KiCad packages3D, STEP)
- 3D model files:
fgl60n100bntdtu-etched.step/fgl60n100bntdtu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fgl60n100bntdtu.step/fgl60n100bntdtu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
f359f1e46617083b, retrieved 2026-09-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).