component
FGL60N100BNTDTU
Public Made by Adomby adom
onsemi IGBT Transistors / Modules, TO-264-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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fgl60n100bntdtu: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
2 files changed
+326
README.md+31@@ -21,6 +21,37 @@ FGL60N100BNTDTU from onsemi, in a TO-264-3. Pinout and pin descriptions extracte | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector to Emitter Breakdown Voltage | BVCES | 1000 | | | V | VGE = 0 V, IC = 1 mA | 3 |+| Collector Cut-Off Current | ICES | | | 1 | mA | VCE = VCES, VGE = 0 V | 3 |+| G-E Leakage Current | IGES | -500 | | 500 | nA | VGE = VGES, VCE = 0 V | 3 |+| G-E Threshold Voltage | VGE(th) | 4 | 5 | 7 | V | IC = 60 mA, VCE = VGE | 3 |+| Collector to Emitter Saturation Voltage | VCE(sat) | | 1.5 | 1.8 | V | IC = 10 A, VGE = 15 V | 3 |+| Collector to Emitter Saturation Voltage | VCE(sat) | | 2.5 | 2.9 | V | IC = 60 A, VGE = 15 V | 3 |+| Diode Forward Voltage | VFM | | 1.2 | 1.7 | V | IF = 15 A | 3 |+| Diode Forward Voltage | VFM | | 1.8 | 2.1 | V | IF = 60 A | 3 |+| Diode Reverse Recovery Time | trr | | 1.2 | 1.5 | us | IF = 60 A, di/dt = 20 A/us | 3 |+| Instantaneous Reverse Current | IR | | 0.05 | 2 | uA | VRRM = 1000 V | 3 |+| Collector to Emitter Voltage | VCES | | | 1000 | V | | 2 |+| Gate to Emitter Voltage | VGES | | | 25 | V | | 2 |+| Collector Current | IC | | | 60 | A | TC = 25oC | 2 |+| Collector Current | IC | | | 42 | A | TC = 100oC | 2 |+| Pulsed Collector Current | ICM | | | 200 | A | TC = 25oC | 2 |+| Diode Continuous Forward Current | IF | | | 15 | A | TC = 100oC | 2 |+| Maximum Power Dissipation | PD | | | 180 | W | TC = 25oC | 2 |+| Maximum Power Dissipation | PD | | | 72 | W | TC = 100oC | 2 |+| Operating Junction Temperature | TJ | -55 | | 150 | oC | | 2 |+| Storage Temperature Range | Tstg | -55 | | 150 | oC | | 2 |+| Maximum Lead Temp. for Soldering | TL | | | 300 | oC | 1/8 in from case for 5 seconds | 2 |+| Thermal Resistance, Junction to Case (IGBT) | RJC(IGBT) | | | 0.69 | oC/W | | 2 |+| Thermal Resistance, Junction to Case (Diode) | RJC(Diode) | | | 2.08 | oC/W | | 2 |+| Thermal Resistance, Junction to Ambient | RJA | | | 25 | oC/W | | 2 |+ ## CAD (KiCad official) - Symbol: `FGL60N100BNTDTU`
page.json+295@@ -133,6 +133,301 @@ "Package": "TO-264-3", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f359f1e46617083b",+ "rows": [+ {+ "name": "Collector to Emitter Breakdown Voltage",+ "symbol": "BVCES",+ "kind": "electrical",+ "unit": "V",+ "min": 1000,+ "typ": null,+ "max": null,+ "conditions": "VGE = 0 V, IC = 1 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector Cut-Off Current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VCE = VCES, VGE = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "G-E Leakage Current",+ "symbol": "IGES",+ "kind": "electrical",+ "unit": "nA",+ "min": -500,+ "typ": null,+ "max": 500,+ "conditions": "VGE = VGES, VCE = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "G-E Threshold Voltage",+ "symbol": "VGE(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 4,+ "typ": 5,+ "max": 7,+ "conditions": "IC = 60 mA, VCE = VGE",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector to Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.5,+ "max": 1.8,+ "conditions": "IC = 10 A, VGE = 15 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector to Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 2.5,+ "max": 2.9,+ "conditions": "IC = 60 A, VGE = 15 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VFM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.2,+ "max": 1.7,+ "conditions": "IF = 15 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VFM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.8,+ "max": 2.1,+ "conditions": "IF = 60 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "us",+ "min": null,+ "typ": 1.2,+ "max": 1.5,+ "conditions": "IF = 60 A, di/dt = 20 A/us",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Instantaneous Reverse Current",+ "symbol": "IR",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": 0.05,+ "max": 2,+ "conditions": "VRRM = 1000 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector to Emitter Voltage",+ "symbol": "VCES",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1000,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Emitter Voltage",+ "symbol": "VGES",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "TC = 25oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 42,+ "conditions": "TC = 100oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Collector Current",+ "symbol": "ICM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "TC = 25oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Continuous Forward Current",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "TC = 100oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "TC = 25oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 72,+ "conditions": "TC = 100oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "oC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "oC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Lead Temp. for Soldering",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "oC",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "1/8 in from case for 5 seconds",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case (IGBT)",+ "symbol": "RJC(IGBT)",+ "kind": "thermal",+ "unit": "oC/W",+ "min": null,+ "typ": null,+ "max": 0.69,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case (Diode)",+ "symbol": "RJC(Diode)",+ "kind": "thermal",+ "unit": "oC/W",+ "min": null,+ "typ": null,+ "max": 2.08,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "oC/W",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],