# FDS4559-HXY

**HXY MOSFET** · MOSFETs · SOP-8

FDS4559-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the N-channel device is rated VDS 60V, ID 6A, with RDS(ON) below 48mΩ at VGS=10V. |
| 2 | G1 | input | Gate of MOSFET 1, rated ±20V VGS maximum, with a threshold of 1.0 to 2.5V for the N-channel device. |
| 3 | S2 | passive | Source of MOSFET 2; the P-channel device is rated VDS -60V, ID -5A, with RDS(ON) below 85mΩ at VGS=-10V. |
| 4 | G2 | input | Gate of MOSFET 2, rated ±20V VGS maximum, with a threshold of -1.0 to -2.5V for the P-channel device. |
| 5 | D2 | passive | Drain of MOSFET 2, rated VDS -60V and ID -5A at TA=25℃; pins 5 and 6 are both D2. |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5 and rated VDS -60V, with a pulsed drain current IDM of -8.5A. |
| 7 | D1 | passive | Drain of MOSFET 1, rated VDS 60V and ID 6A at TA=25℃; pins 7 and 8 are both D1. |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7 and rated VDS 60V, with a pulsed drain current IDM of 11A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Channel Drain-Source Voltage | VDS |  |  | 60 | V | TC=25℃ unless otherwise noted | 1 |
| P-Channel Drain-Source Voltage | VDS | -60 |  |  | V | TC=25℃ unless otherwise noted | 1 |
| N-Channel Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ unless otherwise noted | 1 |
| P-Channel Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ unless otherwise noted | 1 |
| N-Channel Continuous Drain Current | ID@TA=25℃ |  |  | 6 | A | VGS @ 10V | 1 |
| P-Channel Continuous Drain Current | ID@TA=25℃ | -5 |  |  | A | VGS @ 10V | 1 |
| N-Channel Continuous Drain Current | ID@TA=70℃ |  |  | 4 | A | VGS @ 10V | 1 |
| P-Channel Continuous Drain Current | ID@TA=70℃ | -3.5 |  |  | A | VGS @ 10V | 1 |
| N-Channel Pulsed Drain Current | IDM |  |  | 11 | A | TC=25℃ unless otherwise noted | 1 |
| P-Channel Pulsed Drain Current | IDM | -8.5 |  |  | A | TC=25℃ unless otherwise noted | 1 |
| N-Channel Single Pulse Avalanche Energy | EAS |  |  | 22.5 | mJ |  | 1 |
| P-Channel Single Pulse Avalanche Energy | EAS |  |  | 35.3 | mJ |  | 1 |
| N-Channel Avalanche Current | IAS |  |  | 22.6 | A | TC=25℃ unless otherwise noted | 1 |
| P-Channel Avalanche Current | IAS | -26.6 |  |  | A | TC=25℃ unless otherwise noted | 1 |
| N-Channel Total Power Dissipation | PD@TA=25℃ |  |  | 2.5 | W | TA=25℃ | 1 |
| P-Channel Total Power Dissipation | PD@TA=25℃ |  |  | 2.5 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 62.5 | ℃/W |  | 1 |
| N-Channel Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| N-Channel Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS = 0V | 2 |
| N-Channel Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS = ±20V | 2 |
| N-Channel Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| N-Channel Static Drain-Source on-Resistance | RDS(on) |  | 40 | 48 | mΩ | VGS=10V, ID=5A | 2 |
| N-Channel Static Drain-Source on-Resistance | RDS(on) |  | 48 | 60 | mΩ | VGS=4.5V, ID=3A | 2 |
| N-Channel Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 6 | A |  | 2 |
| N-Channel Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| N-Channel Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=5A | 2 |
| P-Channel Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 3 |
| P-Channel Static Drain-Source On-Resistance | RDS(ON) |  | 70 | 100 | mΩ | VGS=-10V, ID=-3.5A | 3 |
| P-Channel Static Drain-Source On-Resistance | RDS(ON) |  | 100 | 115 | mΩ | VGS=-4.5V, ID=-3.1A | 3 |
| P-Channel Gate Threshold Voltage | VGS(th) | -2.5 |  | -1 | V | VGS=VDS, ID=-250uA | 3 |
| P-Channel Drain-Source Leakage Current (TJ=25℃) | IDSS |  |  | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 |
| P-Channel Drain-Source Leakage Current (TJ=55℃) | IDSS |  |  | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 |
| P-Channel Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-Channel Continuous Source Current | IS |  |  | -6 | A | VG=VD=0V, Force Current | 3 |
| P-Channel Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `FDS4559-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `fds4559-hxy-etched.step` / `fds4559-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds4559-hxy.step` / `fds4559-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757975072219254784) (9 pp, sha256 `a601d73b26192a6c`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds4559-hxy-datasheet.pdf)