component
FDS4559-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
fds4559-hxy: specified limits as data (metadata.characteristics, 38 rows from the datasheet)
2 files changed
+509−1
README.md+45@@ -26,6 +26,51 @@ FDS4559-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted f | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| N-Channel Drain-Source Voltage | VDS | | | 60 | V | TC=25℃ unless otherwise noted | 1 |+| P-Channel Drain-Source Voltage | VDS | -60 | | | V | TC=25℃ unless otherwise noted | 1 |+| N-Channel Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ unless otherwise noted | 1 |+| P-Channel Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ unless otherwise noted | 1 |+| N-Channel Continuous Drain Current | ID@TA=25℃ | | | 6 | A | VGS @ 10V | 1 |+| P-Channel Continuous Drain Current | ID@TA=25℃ | -5 | | | A | VGS @ 10V | 1 |+| N-Channel Continuous Drain Current | ID@TA=70℃ | | | 4 | A | VGS @ 10V | 1 |+| P-Channel Continuous Drain Current | ID@TA=70℃ | -3.5 | | | A | VGS @ 10V | 1 |+| N-Channel Pulsed Drain Current | IDM | | | 11 | A | TC=25℃ unless otherwise noted | 1 |+| P-Channel Pulsed Drain Current | IDM | -8.5 | | | A | TC=25℃ unless otherwise noted | 1 |+| N-Channel Single Pulse Avalanche Energy | EAS | | | 22.5 | mJ | | 1 |+| P-Channel Single Pulse Avalanche Energy | EAS | | | 35.3 | mJ | | 1 |+| N-Channel Avalanche Current | IAS | | | 22.6 | A | TC=25℃ unless otherwise noted | 1 |+| P-Channel Avalanche Current | IAS | -26.6 | | | A | TC=25℃ unless otherwise noted | 1 |+| N-Channel Total Power Dissipation | PD@TA=25℃ | | | 2.5 | W | TA=25℃ | 1 |+| P-Channel Total Power Dissipation | PD@TA=25℃ | | | 2.5 | W | TA=25℃ | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |+| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction-Ambient | RθJA | | | 85 | ℃/W | | 1 |+| Thermal Resistance Junction-Case | RθJC | | | 62.5 | ℃/W | | 1 |+| N-Channel Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V, ID=250μA | 2 |+| N-Channel Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS = 0V | 2 |+| N-Channel Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS = ±20V | 2 |+| N-Channel Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |+| N-Channel Static Drain-Source on-Resistance | RDS(on) | | 40 | 48 | mΩ | VGS=10V, ID=5A | 2 |+| N-Channel Static Drain-Source on-Resistance | RDS(on) | | 48 | 60 | mΩ | VGS=4.5V, ID=3A | 2 |+| N-Channel Maximum Continuous Drain to Source Diode Forward Current | IS | | | 6 | A | | 2 |+| N-Channel Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 20 | A | | 2 |+| N-Channel Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=5A | 2 |+| P-Channel Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250uA | 3 |+| P-Channel Static Drain-Source On-Resistance | RDS(ON) | | 70 | 100 | mΩ | VGS=-10V, ID=-3.5A | 3 |+| P-Channel Static Drain-Source On-Resistance | RDS(ON) | | 100 | 115 | mΩ | VGS=-4.5V, ID=-3.1A | 3 |+| P-Channel Gate Threshold Voltage | VGS(th) | -2.5 | | -1 | V | VGS=VDS, ID=-250uA | 3 |+| P-Channel Drain-Source Leakage Current (TJ=25℃) | IDSS | | | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 |+| P-Channel Drain-Source Leakage Current (TJ=55℃) | IDSS | | | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 |+| P-Channel Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |+| P-Channel Continuous Source Current | IS | | | -6 | A | VG=VD=0V, Force Current | 3 |+| P-Channel Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |+ ## CAD (KiCad official) - Symbol: `FDS4559-HXY`
page.json+464−1@@ -178,6 +178,469 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a601d73b26192a6c",+ "rows": [+ {+ "name": "N-Channel Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Continuous Drain Current",+ "symbol": "ID@TA=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Continuous Drain Current",+ "symbol": "ID@TA=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Continuous Drain Current",+ "symbol": "ID@TA=70℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Continuous Drain Current",+ "symbol": "ID@TA=70℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -3.5,+ "typ": null,+ "max": null,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -8.5,+ "typ": null,+ "max": null,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 22.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 35.3,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 22.6,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -26.6,+ "typ": null,+ "max": null,+ "conditions": "TC=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Total Power Dissipation",+ "symbol": "PD@TA=25℃",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Total Power Dissipation",+ "symbol": "PD@TA=25℃",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Gate to Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS = ±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Static Drain-Source on-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 40,+ "max": 48,+ "conditions": "VGS=10V, ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Static Drain-Source on-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 48,+ "max": 60,+ "conditions": "VGS=4.5V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Maximum Continuous Drain to Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Maximum Pulsed Drain to Source Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-Channel Drain to Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V, IS=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 70,+ "max": 100,+ "conditions": "VGS=-10V, ID=-3.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 100,+ "max": 115,+ "conditions": "VGS=-4.5V, ID=-3.1A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -2.5,+ "typ": null,+ "max": -1,+ "conditions": "VGS=VDS, ID=-250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Drain-Source Leakage Current (TJ=25℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=-48V, VGS=0V, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Drain-Source Leakage Current (TJ=55℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=-48V, VGS=0V, TJ=55℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Continuous Source Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6,+ "conditions": "VG=VD=0V, Force Current",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-Channel Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS=0V, IS=-1A, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +682,4 @@ "visibility": { "public": true }-}+}